Elektronische Bauelemente

SSG60P05J

Ω

Ω

Ω

P-Ch Enhancement Mode Power MOSFET

10-Feb-2017 Rev. B

Page 2 of 3

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test condition

Off Characteristics

Drain-Source Breakdown Voltage

-60

-

-

V

Drain-Source Leakage Current

-

-

-1

µA

Gate-Body Leakage Current

-

-

±100

nA

On Characteristics

3

Gate-Threshold Voltage

-1.5

-

-3.5

V

Drain-Source On-Resistance

-

-

80

m

Forward Transfer Conductance

5

-

-

S

Dynamic Characteristics

Input Capacitance

-

1450

-

Output Capacitance

-

145

-

Reverse Transfer Capacitance

-

110

-

pF

f=1MHz

Switching Characteristics

Turn-On Delay Time

-

8

-

Rise Time

-

9

-

Turn-Off Delay Time

-

65

-

Fall Time

-

30

-

nS

Total Gate Charge

-

26

-

Gate-Source Charge

-

4.5

-

Gate-Drain (“Miller”) Charge

-

7

-

nC

Source-Drain Diode Characteristics

Forward On Voltage

3

-

-

-1.2

V

Continuous Source Current

2

-

-

-5

A

Notes:

1.

Repetitive Rating : Pulse width is limited by the maximum junction temperature.

2.

Surface mounted on FR4 board, t≦10sec.

3.

Pulse Test : Pulse width≦300µs, duty cycle≦2%.