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SSG9971A Scheda tecnica(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SSG9971A Scheda tecnica(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 4 page  Elektronische Bauelemente SSG9971A 5A, 60V, RDS(ON) 36mΩ Ω Ω Ω Dual-N Enhancement Mode Power MOSFET 02-Jun-2017 Rev. B Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A H B M D C J K F L E N G 9971ASS = Date Code RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSG9971A is the highest performance trench dual N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The SSG9971A meet the RoHS and Green Product requirement with full function reliability approved. FEATURES Advanced high cell density Trench technology Super Low Gate Charge Green Device Available MARKING CODE PACKAGE INFORMATION Package MPQ Leader Size SOP-8 2.5K 13 inch ABSOLUTE MAXIMUM RATINGS (T A=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V TA=25°C 5 Continuous Drain Current 1@ V GS=10V TA=70°C ID 4 A Pulsed Drain Current 3 IDM 14 A Power Dissipation@ TA=25°C PD 1.5 W Operating Junction & Storage Temperature Range TJ, TSTG -55~150 °C Thermal Resistance Rating Thermal Resistance Junction-Ambient 1 RθJA 85 °C/W Thermal Resistance Junction-Ambient 2 RθJA 135 °C/W Thermal Resistance Junction-Case 1 RΘjc 50 °C/W SOP-8 G S G S D D D D Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 5.79 6.20 H 0.33 0.51 B 4.70 5.11 J 0.375 REF. C 3.80 4.00 K 45°REF. D 0° 8° L 1.3 1.752 E 0.40 1.27 M 0 0.25 F 0.10 0.25 N 0.25 REF. G 1.27 TYP. |
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