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ECT25S80 Scheda tecnica(PDF) 32 Page - E-CMOS Corporation

Il numero della parte ECT25S80
Spiegazioni elettronici  8M BIT SPI NOR FLASH
PDF  45 Pages
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Produttore elettronici  E-CMOS [E-CMOS Corporation]
Homepage  http://www.ecmos.com.tw/
Logo E-CMOS - E-CMOS Corporation

ECT25S80 Scheda tecnica(HTML) 32 Page - E-CMOS Corporation

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5B16N-Rev.F001
ECT25S80
8M BIT SPI NOR FLASH
Sector Erase (20H)
The Sector Erase instruction is for erasing the all data of the chosen sector. A Write Enable
instruction must previously have been executed to set the Write Enable Latch bit.The Sector
Erase instruction is entered by driving /CS low, followed by the instruction code, and 3-address
byte on SI. Any address inside the sector is a valid address for the Sector Erase instruction.
/CS must be driven low for the entire duration of the sequence.
See Figure 28, The Sector Erase instruction sequence: /CS goes low sending 64KB Block
Erase instruction 3-byte address on SI /CS goes high. /CS must be driven high after the eighth
bit of the last address byte has been latched in; otherwise the Sector Erase instruction is not
executed. As soon as /CS is driven high, the self-timed Sector Erase cycle (whose duration is
tSE) is initiated. While the Sector Erase cycle is in progress, the Status Register may be read
to check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1
during the self-timed Sector Erase cycle, and is 0 when it is completed. At some unspecified
time before the cycle is completed, the Write Enable Latch bit is reset. A Sector Erase
instruction applied to a sector which is protected by the Block Protect (SEC, TB, BP2, BP1,
BP0) bit is not executed.
Figure 28. Sector Erase Sequence Diagram
32KB Block Erase (52H)
The 32KB Block
Erase instruction is for erasing the all data of the chosen block. A Write
Enable instruction must previously have been executed to set the Write Enable Latch bit. The
32KB Block Erase instruction is entered by driving /CS low, followed by the instruction code,
and 3-byte address on SI. Any address inside the block is a valid address for the 32KB Block
Erase instruction. /CS must be driven low for the entire duration of the sequence.
See Figure 29, the 32KB Block Erase instruction sequence: /CS goes low sending 32KB
Block Erase instruction 3-byte address on SI /CS goes high. /CS must be driven high after the
eighth bit of the last address byte has been latched in; otherwise the 32KB Block Erase
instruction is not executed. As soon as /CS is driven high, the self-timed Block Erase cycle
(whose duration is tBE) is initiated. While the Block Erase cycle is in progress, the Status
Register may be read to check the value of the Write In Progress (WIP) bit. The Write In
Progress
(WIP)
bit
is
1
during
the self-timed Block Erase cycle, and is 0 when it is
completed. At some unspecified time before the cycle is completed, the Write Enable Latch bit
is reset. A 32KB Block Erase instruction applied to a block which is protected by the Block
Protect (SEC, TB, BP2, BP1, BP0) bits (see
Table 6&7) is not executed.



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