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ECCSR150 Scheda tecnica(PDF) 1 Page - E-CMOS Corporation

Il numero della parte ECCSR150
Spiegazioni elettronici  1.0A Surface Mount Schottky Barrier Rectifiers - 20V-200V
PDF  5 Pages
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Produttore elettronici  E-CMOS [E-CMOS Corporation]
Homepage  http://www.ecmos.com.tw/
Logo E-CMOS - E-CMOS Corporation

ECCSR150 Scheda tecnica(HTML) 1 Page - E-CMOS Corporation

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1.0A Surface Mount Schottky Barrier
Rectifiers - 20V-200V
E-CMOS Corp. (www.ecmos.com.tw)
Page 1 of 5
4L05N-Rev. F001
ECCSR120-ECCSR1200
Features
Batch process design, excellent power dissipation offers better
reverse leakage current and thermal resistance.
Low profile surface mounted application in order to optimize
board space.
Low power loss, high efficiency.
High current capability, low forward voltage drop.
High surge capability.
Guardring for overvoltage protection.
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Suffix "H" indicates Halogen-free parts, ex. ECCSR120L1HR
Mechanical Data
Epoxy : UL94-V0 rated flame retardant
Case : Molded plastic, DO-214AC / SMA
Terminals :Plated terminals, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : Approximated 0.05 gram
Maximum ratings and Electrical Characteristics (At TA=25 oC unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
Forward rectified current
See Fig.2
IO
1.0
A
Forward surge current
8.3ms single half sine-wave
(JEDEC methode)
IFSM
30
A
VR = VRRM TJ = 25
0.5
Reverse current
VR = VRRM TJ = 125
IR
10
mA
Junction to ambient
R
θJA
64
Thermal resistance
Junction to case
R
θJC
32
Diode junction capacitance
f=1MHz and applied 4V DC reverse voltage
CJ
120
pF
Storage temperature
TSTG
-65
175


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