QPD1025LS2 datasheet(5/18 Pages) TRIQUINT

Il numero della parte	QPD1025LS2

Spiegazioni elettronici	1500 W, 65 V, 1.0 ??1.1 GHz, GaN RF Input-Matched Transistor

PDF	18 Pages

Scroll/Zoom	100%

Produttore elettronici	TRIQUINT [TriQuint Semiconductor]

Homepage	http://www.triquint.com

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5 / 18 page

QPD1025L

1500 W, 65 V, 1.0

– 1.1 GHz, GaN RF Input-Matched Transistor

Datasheet Rev. B

│ Subject to change without notice

- 5 of 18 -

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Measured Load-Pull Smith Charts 1, 2, 3

Notes:

Test Conditions: VD = 65 V, IDQ = 750 mA, 100 us Pulse Width, 10% Duty Cycle, Temp = 25°C.

The performance shown below is for only half of the device out of the two independent amplification paths.

See page 13 for load pull reference planes where the performance was measured.

1.1GHz, Load-pull

58.9

58.7

58.5

58.3

58.1

57.9

57.7

57.5

20.1

19.6

19.1

18.6

18.1

17.6

63.9

65.9

67.9

69.9

71.9

73.9

75.9

• Max Power is 59dBm

at Z = 2.53+0.746i

 = -0.0655+0.1438i

• Max Gain is 20.4dB

at Z = 1.111+1.709i

 = -0.2444+0.5171i

• Max PAE is 76.9%

at Z = 2.221+1.322i

 = -0.08+0.2735i

Zo = 3

3dB Compression Referenced to Peak Gain

Zs(fo) = 0.94-2.29i

Zs(2fo) = 0.47-0.06i

Zs(3fo) = 0.52+0.8i

Zl(2fo) = 0.8+0.69i

Zl(3fo) = NaN

Power

Gain

PAE

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