AC16FSM datasheet(19/223 Pages) TECCOR

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Thyristor Product Catalog

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Electrical Parameter Terminology

Thyristor

di/dt (Critical Rate-of-rise of On-state Current) – Maximum

value of the rate-of-rise of on-state current which a thyristor can

withstand without deleterious effect

dv/dt (Critical Rate-of-rise of Off-state Voltage or Static

dv/dt) – Minimum value of the rate-of-rise of principal voltage

which will cause switching from the off state to the on state

dv/dt(c) Critical Rate-of-rise of Commutation Voltage of a

Triac (Commutating dv/dt) – Minimum value of the rate-of-rise

of principal voltage which will cause switching from the off state

to the on state immediately following on-state current conduction

in the opposite quadrant

I2t (RMS Surge (Non-repetitive) On-state Fusing Current) –

Measure of let-through energy in terms of current and time for

fusing purposes

IBO (Breakover Current) – Principal current at the breakover

point

IDRM (Repetitive Peak Off-state Current) – Maximum leakage

current that may occur under the conditions of VDRM

IGT (Gate Trigger Current) – Minimum gate current required to

switch a thyristor from the off state to the on state

IH (Holding Current) – Minimum principal current required to

maintain the thyristor in the on state

IPP (Peak Pulse Current) – Peak pulse current at a short time

duration and specified waveshape

IRRM (Repetitive Peak Reverse Current) – Maximum leakage

current that may occur under the conditions of VRRM

IS (Switching Current) – Current at VS when a sidac switches

from the clamping state to on state

IT(RMS) (On-state Current) – Anode cathode principal current

that may be allowed under stated conditions, usually the full-

cycle RMS current

ITSM (Surge (Non-repetitive) On-state Current) – Peak single

cycle AC current pulse allowed

PG(AV) (Average Gate Power Dissipation) – Value of gate

power which may be dissipated between the gate and main ter-

minal 1 (or cathode) average over a full cycle

PGM (Peak Gate Power Dissipation) – Maximum power which

may be dissipated between the gate and main terminal 1 (or

cathode) for a specified time duration

RθJA (Thermal Resistance, Junction-to-ambient) – Tempera-

ture difference between the thyristor junction and ambient divided

by the power dissipation causing the temperature difference

under conditions of thermal equilibrium

Note: Ambient is defined as the point where temperature does

not change as a result of the dissipation.

RθJC (Thermal Resistance, Junction-to-case) – Temperature

difference between the thyristor junction and the thyristor case

divided by the power dissipation causing the temperature differ-

ence under conditions of thermal equilibrium

tgt (Gate-controlled Turn-on Time) – Time interval between

the 10% rise of the gate pulse and the 90% rise of the principal

current pulse during switching of a thyristor from the off state to

the on state

tq (Circuit-commutated Turn-off Time) – Time interval

between the instant when the principal current has decreased to

zero after external switching of the principal voltage circuit and

the instant when the SCR is capable of supporting a specified

principal voltage without turning on

VBO (Breakover Voltage) – Principal voltage at the breakover

point

VDRM (Repetitive Peak Off-state Voltage) – Maximum allow-

able instantaneous value of repetitive off-state voltage that may

be applied across a bidirectional thyristor (forward or reverse

direction) or SCR (forward direction only)

VGT (Gate Trigger Voltage) – Minimum gate voltage required to

produce the gate trigger current

VRRM (Repetitive Peak Reverse Voltage) – Maximum allow-

able instantaneous value of a repetitive reverse voltage that may

be applied across an SCR without causing reverse current ava-

lanche

VS (Switching Voltage) – Voltage point after VBO when a sidac

switches from a clamping state to on state

VT (On-state Voltage) – Principal voltage when the thyristor is in

the on state

Diode Rectifiers

IF(AV) (Average Forward Current) – Average forward conduc-

tion current

IFM (Maximum (Peak) Reverse Current) – Maximum reverse

leakage current that may occur at rated VRRM

IF(RMS) (RMS Forward Current) – RMS forward conduction cur-

rent

IFSM (Maximum (Peak) Forward (Non-repetitive) Surge

Current) – Maximum (peak) forward single cycle AC surge cur-

rent allowed for specified duration

VFM (Maximum (Peak) Forward Voltage Drop) – Maximum

(peak) forward voltage drop from the anode to cathode at stated

conditions

VR (Reverse Blocking Voltage) – Maximum allowable DC

reverse blocking voltage that may be applied to the rectifier

VRRM (Maximum (Peak) Repetitive Reverse Voltage) – Maxi-

mum peak allowable value of a repetitive reverse voltage that

may be applied to the rectifier

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