STT4PF20V datasheet(1/8 Pages) STMICROELECTRONICS

Il numero della parte	STT4PF20V

Spiegazioni elettronici	P-CHANNEL 20V - 0.090 W - 3A SOT23-6L 2.7V-DRIVE STripFET II POWER MOSFET

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Produttore elettronici	STMICROELECTRONICS [STMicroelectronics]

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May 2003

.

STT4PF20V

P-CHANNEL 20V - 0.090

Ω - 3A SOT23-6L

2.7V-DRIVE STripFET™ II POWER MOSFET

s

TYPICAL RDS(on) = 0.090 Ω @ 4.5 V

s

TYPICAL RDS(on) = 0.100 Ω @ 2.7 V

s

ULTRA LOW THRESHOLD

GATE DRIVE (2.7 V)

s

STANDARD OUTLINE FOR EASY

AUTOMATED SURFACE MOUNT ASSEMBLY

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronis unique "Single Feature Size™"

strip-based

process.

The

resulting

transistor

shows extremely high packing density for low on-

resistance, rugged avalanche characteristics and

less critical alignment steps therefore a remark-

able manufacturing reproducibility.

APPLICATIONS

s

MOBILE PHONE APPLICATIONS

s

DC-DC CONVERTERS

s

BATTERY MANAGEMENT IN NOMADIC

EQUIPMENT

TYPE

VDSS

RDS(on)

ID

STT4PF20V

20 V

< 0.11

Ω ( @ 4.5 V )

< 0.135

Ω ( @ 2.7 V )

3 A

SOT23-6L

ABSOLUTE MAXIMUM RATINGS

(

•) Pulse width limited by safe operating area.

Note: For the P-CHANNEL MOSFET actual polarity of voltages and

current has to be reversed

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

20

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

20

V

VGS

Gate- source Voltage

± 10

V

ID

Drain Current (continuous) at TC = 25°C

3A

ID

Drain Current (continuous) at TC = 100°C

1.9

A

IDM(•)

Drain Current (pulsed)

12

A

Ptot

Total Dissipation at TC = 25°C

1.6

W

INTERNAL SCHEMATIC DIAGRAM

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