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AFF450A Scheda tecnica(PDF) 1 Page - Power Semiconductors |
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AFF450A Scheda tecnica(HTML) 1 Page - Power Semiconductors |
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1 / 3 page ![]() FAST RECOVERY DIODE AFF450A INSULATED MODULE Repetitive voltage up to 4500 V Mean on-state current 448 A Surge current 10 kA FINAL SPECIFICATION apr 17 - ISSUE : 2 Symbol Characteristic Conditions Tj [°C] Value Unit BLOCKING V RRM Repetitive peak reverse voltage 150 4500 V V RSM Non-repetitive peak reverse voltage 150 4600 V I RRM Repetitive peak reverse current 150 50 mA CONDUCTING I F (AV) Mean on-state current 180° sin, 50Hz, Tc=100°C 448,5 A I F (AV) Mean on-state current 180° sin. 50Hz, Tc=55°C 703,3 A I FSM Surge on-state current sine wave, 10 ms 150 10,0 kA I² t I² t without reverse voltage 500 x1E3 A²s V F On-state voltage On-state current = 1500 A 150 2,525 V V F(TO) Threshold voltage 150 1,40 V r F On-state slope resistance 150 0,750 mohm Q rr Reverse recovery charge I F = 1000 A 150 µC I rr Peak reverse recovery current di/dt= 150 A/µs 150 A t rr Reverse recovery time VR = 100 V 150 µs V FR Peak forward recovery di/dt= 400 A/µs 150 µs MOUNTING R th(j-c) Thermal impedance Junction to case, per element °C/kW R th(c-h) Thermal impedance Case to heatsink, per element °C/kW T j Operating junction temperature -30 / 150 °C V ins RMS insulation voltage 50Hz, circuit to base,all terminal shorted 25 V T Mounting tourque Case to heatsink Nm Busbars to terminals Nm Mass g ORDERING INFORMATION : AFF450A S 45 1600 500 6,4 12 to 18 1500 4500 50 20 4 to 6 60 *Full ermetic packaging *Industrial compatible packaging *Insulation using Aln substrate *6KVrms insulation voltage available on request *Contact screws avaliable on request (*) 6000V available on request. Add HVI to the desired code in phase of order, i.e. AFF230HVIS26 standard specification VRRM/100 |
Codice articolo simile - AFF450A |
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Descrizione simile - AFF450A |
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