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AFF450A Scheda tecnica(PDF) 1 Page - Power Semiconductors

Il numero della parte AFF450A
Spiegazioni elettronici  FAST RECOVERY DIODE
PDF  3 Pages
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Produttore elettronici  POSEICO [Power Semiconductors]
Homepage  http://www.poseico.com
Logo POSEICO - Power Semiconductors

AFF450A Scheda tecnica(HTML) 1 Page - Power Semiconductors

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FAST RECOVERY DIODE
AFF450A
INSULATED MODULE
Repetitive voltage up to
4500
V
Mean on-state current
448
A
Surge current
10
kA
FINAL SPECIFICATION
apr 17 - ISSUE : 2
Symbol
Characteristic
Conditions
Tj
[°C]
Value
Unit
BLOCKING
V RRM
Repetitive peak reverse voltage
150
4500
V
V RSM
Non-repetitive peak reverse voltage
150
4600
V
I RRM
Repetitive peak reverse current
150
50
mA
CONDUCTING
I F (AV)
Mean on-state current
180° sin, 50Hz, Tc=100°C
448,5
A
I F (AV)
Mean on-state current
180° sin. 50Hz, Tc=55°C
703,3
A
I FSM
Surge on-state current
sine wave, 10 ms
150
10,0
kA
I² t
I² t
without reverse voltage
500 x1E3
A²s
V F
On-state voltage
On-state current =
1500 A
150
2,525
V
V F(TO)
Threshold voltage
150
1,40
V
r F
On-state slope resistance
150
0,750
mohm
Q rr
Reverse recovery charge
I F =
1000 A
150
µC
I rr
Peak reverse recovery current
di/dt=
150 A/µs
150
A
t rr
Reverse recovery time
VR =
100 V
150
µs
V FR
Peak forward recovery
di/dt=
400 A/µs
150
µs
MOUNTING
R th(j-c)
Thermal impedance
Junction to case, per element
°C/kW
R th(c-h)
Thermal impedance
Case to heatsink, per element
°C/kW
T j
Operating junction temperature
-30 / 150
°C
V ins
RMS insulation voltage
50Hz, circuit to base,all terminal shorted
25
V
T
Mounting tourque
Case to heatsink
Nm
Busbars to terminals
Nm
Mass
g
ORDERING INFORMATION : AFF450A S 45
1600
500
6,4
12 to 18
1500
4500
50
20
4 to 6
60
*Full ermetic packaging
*Industrial compatible packaging
*Insulation using Aln substrate
*6KVrms insulation voltage available on request
*Contact screws avaliable on request
(*) 6000V available on request.
Add HVI to the desired code in
phase of order, i.e. AFF230HVIS26
standard specification
VRRM/100


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