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MOC8021 Scheda tecnica(PDF) 2 Page - Vishay Siliconix |
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MOC8021 Scheda tecnica(HTML) 2 Page - Vishay Siliconix |
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2 / 6 page ![]() www.vishay.com 2 Document Number 83637 Rev. 1.5, 26-Oct-04 IL55B/ 56B/ MOC8021 Vishay Semiconductors Output Coupler Electrical Characteristics Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Output Parameter Test condition Symbol Value Unit Collector-emitter breakdown voltage BVCEO 80 V Emitter-collector breakdown voltage BVECO 5.0 V Collector (load) current IC 125 mA Power dissipation Pdiss 150 mW Derate linearly from 25 °C 2.0 mW/°C Parameter Test condition Symbol Value Unit Total power dissipation Ptot 250 mW Derate linearly from 25 °C 3.3 mW/°C Isolation test voltage (between emitter and detector referred to standard climate 23 °C/50 % RH, DIN 50014) VISO 5300 VRMS Creepage ≥ 7mm Clearance ≥ 7mm Tracking resistance, group III (KC > 600 per VDE 110 § 6, table 3 and DIN 54380/VDE 0330, part 1 Isolation resistance VIO = 500 V, Tamb = 25 °C RIO 1012 Ω VIO = 500 V, Tamb = 100 °C RIO 1011 Ω Storage temperature Tstg - 55 to + 150 °C Operating temperature Tamb - 55 to + 100 °C Lead soldering time at 260 °C Tsld 10 sec. Parameter Test condition Symbol Min Typ. Max Unit Forward voltage IF = 50 mA VF 1.25 1.5 V Reverse current VR = 3.0 V IR 0.1 10 µA Capacitance VR = 0 V CO 25 pF Parameter Test condition Symbol Min Typ. Max Unit Collector-emitter breakdown voltage IC = 1.0 mA, IF = 0 BVCEO 80 V Emitter-collector breakdown voltage IE = 100 µA, IF = 0 BVECO 5.0 10 V Collector-emitter leakage current VCE = 60 V ICEO 1.0 µA |
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