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MOC8021 Scheda tecnica(PDF) 2 Page - Vishay Siliconix

Il numero della parte MOC8021
Spiegazioni elettronici  Optocoupler, Photodarlington Output, High Gain
PDF  6 Pages
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Produttore elettronici  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

MOC8021 Scheda tecnica(HTML) 2 Page - Vishay Siliconix

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Document Number 83637
Rev. 1.5, 26-Oct-04
IL55B/ 56B/ MOC8021
Vishay Semiconductors
Output
Coupler
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Output
Parameter
Test condition
Symbol
Value
Unit
Collector-emitter breakdown
voltage
BVCEO
80
V
Emitter-collector breakdown
voltage
BVECO
5.0
V
Collector (load) current
IC
125
mA
Power dissipation
Pdiss
150
mW
Derate linearly from 25 °C
2.0
mW/°C
Parameter
Test condition
Symbol
Value
Unit
Total power dissipation
Ptot
250
mW
Derate linearly from 25 °C
3.3
mW/°C
Isolation test voltage (between
emitter and detector referred to
standard climate
23 °C/50 % RH, DIN 50014)
VISO
5300
VRMS
Creepage
≥ 7mm
Clearance
≥ 7mm
Tracking resistance, group III
(KC > 600 per VDE 110 § 6,
table 3 and DIN 54380/VDE
0330, part 1
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
1012
Ω
VIO = 500 V, Tamb = 100 °C
RIO
1011
Ω
Storage temperature
Tstg
- 55 to + 150
°C
Operating temperature
Tamb
- 55 to + 100
°C
Lead soldering time at 260 °C
Tsld
10
sec.
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Forward voltage
IF = 50 mA
VF
1.25
1.5
V
Reverse current
VR = 3.0 V
IR
0.1
10
µA
Capacitance
VR = 0 V
CO
25
pF
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Collector-emitter breakdown
voltage
IC = 1.0 mA, IF = 0
BVCEO
80
V
Emitter-collector breakdown
voltage
IE = 100 µA, IF = 0
BVECO
5.0
10
V
Collector-emitter leakage
current
VCE = 60 V
ICEO
1.0
µA



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