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ESJC50F10 Scheda tecnica(PDF) 2 Page - GETAI ELECTRONICS DEVICE CO., LTD |
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ESJC50F10 Scheda tecnica(HTML) 2 Page - GETAI ELECTRONICS DEVICE CO., LTD |
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2 / 2 page ![]() ESJC50F10 500mA 10kV 100nS--High voltage silicon rectifier diodes GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: sales@getedz.com GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628 FAX:0086-20-8184 9638 2017 2 / 2 Fig 1 Fig 2 Forward Current Derating Curve Reverse Recovery Measurement Waveform Average current rating at 55°C, unless otherwise specified. Max operating temperature is 150°C ,unless otherwise specified. Typical data capture points: IF =0.5IR , IR,IRR =0.25IR IR is typically the rated average forward current maximum (IFAVM) of the D.U.T Fig 3 Non-Repetitive Surge Current Marking Type Code Cathode Mark ESJC50F10 ESJC50F10 |
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