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DP8481F Scheda tecnica(PDF) 2 Page - National Semiconductor (TI) |
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DP8481F Scheda tecnica(HTML) 2 Page - National Semiconductor (TI) |
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2 / 6 page ![]() Absolute Maximum Ratings (Note 1) If MilitaryAerospace specified devices are required please contact the National Semiconductor Sales OfficeDistributors for availability and specifications VEE Supply Voltage b 8V VCC Supply Voltage 7V Input Voltage (ECL) GND to VEE Input Voltage (TTL) b 1V to 55V Output Current 50 mA Maximum Power Dissipation at 25 C Molded Package 1476 mW Storage Temperature b 65 Cto a150 C Derate molded package 118 mW C above 25 C Recommended Operating Conditions VEE Supply Voltage b 52V g10% VCC Supply Voltage 50V g10% TA Ambient Temperature 0 Cto75 C Electrical Characteristics (TTL Logic) (Notes 2 and 3) Symbol Parameter Conditions Min Typ Max Units VIL Input Low Voltage 08 V VIH Input High Voltage 20 V IIL Input Low Current VINe05V b 25 b 200 m A IIH Input High Current VINe25V 10 40 m A VCLAMP Input Clamp Voltage IINeb12 mA b 09 b 12 V ICC Supply Current VCCe55V 10 20 mA Electrical Characteristics (ECL Logic) (Notes 2 and 3) Symbol Parameter Conditions TA Min Typ Max Units VIL Input Low Voltage VEEeb52V 0 C b 1870 b 1490 25 C b 1850 b 1475 mV 75 C b 1830 b 1450 VIH Input High Voltage VEEeb52V 0 C b 1145 b 840 25 C b 1105 b 810 mV 75 C b 1045 b 720 IIL Input Low Current VINeb18V 55 150 m A IIH Input High Current VINeb08V 85 200 m A VOL Output Low Voltage VEEeb52V 0 C b 1870 b 1665 25 C b 1850 b 1650 mV 75 C b 1830 b 1625 VOH Output High Voltage VEEeb52V 0 C b 1000 b 840 25 C b 960 b 810 mV 75 C b 900 b 720 VOLC Output Low Voltage VEEeb52V 0 C b 1645 25 C b 1630 mV 75 C b 1605 VOHC Output High Voltage VEEeb52V 0 C b 1020 25 C b 980 mV 75 C b 920 IEE Supply Current VEEeb57V b 70 b 90 mA 2 |
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