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Motore di ricerca datesheet componenti elettronici |
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Motore di ricerca datesheet componenti elettronici |
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IRLML2402 Scheda tecnica(PDF) 1 Page - International Rectifier |
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IRLML2402 Scheda tecnica(HTML) 1 Page - International Rectifier |
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1 / 8 page  IRLML2402 PD - 91257D Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. A customized leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. VDSS = 20V RDS(on) = 0.25Ω HEXFET® Power MOSFET Description 01/15/03 l Generation V Technology l Ultra Low On-Resistance l N-Channel MOSFET l SOT-23 Footprint l Low Profile (<1.1mm) l Available in Tape and Reel l Fast Switching S D G Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 1.2 ID @ TA = 70°C Continuous Drain Current, VGS @ 4.5V 0.95 A IDM Pulsed Drain Current 7.4 PD@TA = 25°C Power Dissipation 540 mW Linear Derating Factor 4.3 mW/°C VGS Gate-to-Source Voltage ± 12 V dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ,TSTG Junction and Storage Temperature Range -55 to + 150 °C Absolute Maximum Ratings Parameter Typ. Max. Units RθJA Maximum Junction-to-Ambient 230 Thermal Resistance °C/W Micro3 |
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