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2N5302 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited

Il numero della parte 2N5302
Spiegazioni elettronici  isc Silicon NPN Power Transistors
PDF  2 Pages
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Produttore elettronici  ISC [Inchange Semiconductor Company Limited]
Homepage  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2N5302 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
2
isc Silicon NPN Power Transistors
2N5302
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 50mA ; IB= 0
60
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 10A; IB= 1A
0.75
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 20A; IB= 2A
2.0
V
VCE(sat)-3
Collector-Emitter Saturation Voltage
IC= 30A; IB= 6A
3.0
V
VBE(sat)-1
Base-Emitter Saturation Voltage
IC= 10A; IB= 1A
1.7
V
VBE(sat)-2
Base-Emitter Saturation Voltage
IC= 15A; IB= 1.5A
1.8
V
VBE(sat)-3
Base-Emitter Saturation Voltage
IC= 20A; IB= 2A
2.5
V
VBE(on)-1
Base-Emitter On Voltage
IC= 15A; VCE= 2V
1.7
V
VBE(on)-2
Base-Emitter On Voltage
IC= 30A; VCE= 4V
3.0
V
ICEO
Collector Cutoff Current
VCE= 60V; IB= 0
5.0
mA
ICBO
Collector Cutoff Current
VCB= 60V; IE= 0
1.0
mA
ICEX
Collector Cutoff Current
VCE= 60V; VBE(off)= 1.5V
VCE= 60V; VBE(off)= 1.5V,TC=150℃
1.0
10
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
5.0
mA
hFE-1
DC Current Gain
IC= 1A; VCE= 2V
40
hFE-2
DC Current Gain
IC= 15A; VCE= 2V
15
60
hFE-3
DC Current Gain
IC= 30A; VCE= 4V
5
fT
Current-Gain—Bandwidth Product
IC= 1A; VCE= 10V ;ftest= 1.0MHz
2
MHz
Switching Times
tr
Rise Time
VCC= 30V; IC= 10A; IB1= -IB2= 1A
1.0
μ
s
ts
Storage Time
2.0
μ
s
tf
Fall Time
1.0
μ
s



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