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MJB2955 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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MJB2955 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon PNP Power Transistor MJB2955 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 -60 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A -1.1 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -3.3A -8.0 V VBE(on) Base-Emitter On Voltage IC= -4A ; VCE= -4V -1.8 V ICEO Collector Cutoff Current VCE= -30V; IB= 0 -0.7 mA ICBO Collector Cutoff Current VCB= -70V; IE= 0 VCB= -70V; IE= 0;TC= 150℃ -1.0 -10 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -5.0 mA hFE-1 DC Current Gain IC= -4A ; VCE= -4V 20 100 hFE-2 DC Current Gain IC= -10A ; VCE= -4V 5 fT Current Gain-Bandwidth Product IC= -0.5A; VCE= -10V; f= 500kHz 2.0 MHz |
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