| Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |
 NEC |
2SD1006
|
223Kb/4P
|
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
|
 Renesas Technology Corp |
2SD1006
|
1Mb/6P
|
Old Company Name in Catalogs and Other Documents
|
|
2SD1006
|
1Mb/6P
|
Old Company Name in Catalogs and Other Documents
|
 Guangdong Kexin Industr... |
2SD1006
|
52Kb/1P
|
NPN Silicon Epitaxial Transistor
|
 SHIKUES Electronics |
2SD1006
|
651Kb/1P
|
High collector to emitter vlotage
|
 Guangdong Kexin Industr... |
2SD1006-HF
|
1Mb/3P
|
NPN Transistors
|
|
2SD1006-K
|
1,018Kb/3P
|
NPN Transistors
|
|
2SD1006-K-HF
|
1Mb/3P
|
NPN Transistors
|
|
2SD1006-L
|
1,018Kb/3P
|
NPN Transistors
|
|
2SD1006-L-HF
|
1Mb/3P
|
NPN Transistors
|
|
2SD1006-M
|
1,018Kb/3P
|
NPN Transistors
|
|
2SD1006-M-HF
|
1Mb/3P
|
NPN Transistors
|
 Renesas Technology Corp |
2SD1006
|
1Mb/6P
|
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
|
 Guangdong Kexin Industr... |
2SD1006
|
1,018Kb/3P
|
NPN Transistors
|