| Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |
 Unisonic Technologies |
13NM60L-TN3-R
|
509Kb/9P
|
13A, 600V N-CHANNEL SUPER-JUNCTION MOSFET
2019
|
|
15NM60L-TN3-R
|
261Kb/6P
|
15A, 600V N-CHANNEL SUPER-JUNCTION MOSFET
|
|
1N60L-TN3-R
|
267Kb/7P
|
N-CHANNEL ENHANCEMENT
|
|
1N60L-TN3-R
|
361Kb/7P
|
N-CHANNEL POWER MOSFET
|
|
1N60L-TN3-R
|
143Kb/8P
|
1.2 Amps, 600 Volts N-CHANNEL MOSFET
|
|
1N60L-TN3-R
|
282Kb/6P
|
1.2A, 600V N-CHANNEL POWER MOSFET
|
 VBsemi Electronics Co.,... |
1N60L-TN3-R
|
1Mb/9P
|
N-Channel 650 V (D-S) MOSFET
|
 Unisonic Technologies |
20NM60L-TN3-R
|
240Kb/6P
|
20A, 600V N-CHANNEL SUPER-JUNCTION MOSFET
|
|
2N60L-TN3-R
|
142Kb/8P
|
2 Amps, 600 Volts N-CHANNEL MOSFET
|
|
2N60L-TN3-R
|
245Kb/6P
|
2A, 600V N-CHANNEL POWER MOSFET
|
|
2N60L-TN3-R
|
280Kb/7P
|
2A, 600V N-CHANNEL POWER MOSFET
|
|
2N60L-TN3-R
|
304Kb/7P
|
N-CHANNEL POWER MOSFET
|
|
2N60L-TN3-R
|
274Kb/7P
|
N-CHANNEL POWER MOSFET
|
|
2N60L-TN3-R
|
294Kb/7P
|
N-CHANNEL ENHANCEMENT MODE
|
 VBsemi Electronics Co.,... |
2N60L-TN3-R
|
1Mb/9P
|
N-Channel 650 V (D-S) MOSFET
|
 SHENZHEN DOINGTER SEMIC... |
2N60L-TN3-R
|
1Mb/5P
|
N-Channel MOSFET uses advanced trench technology
|
 VBsemi Electronics Co.,... |
3N60L-TN3-R
|
1Mb/9P
|
Power MOSFET
|
 Unisonic Technologies |
3N60L-TN3-R
|
399Kb/9P
|
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
|
|
3N60L-TN3-R
|
388Kb/8P
|
3A, 600V N-CHANNEL POWER MOSFET
|
|
3N60L-TN3-R
|
698Kb/8P
|
3.0A, 600V N-CHANNEL POWER MOSFET
|