| Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |
 A POWER MICROELECTRONIC... |
AP4953C
|
1Mb/7P
|
-20V P+P-Channel Enhancement Mode MOSFET
REV1.0
|
| Search Partnumber :
Start with "AP4953C" -
Total : 30 ( 1/2 Page) |
 A POWER MICROELECTRONIC... |
AP4953A
|
1Mb/7P |
-30V P+P-Channel Enhancement Mode MOSFET
|
|
AP4953B
|
1Mb/7P |
-20V P+P-Channel Enhancement Mode MOSFET
|
 Advanced Power Electron... |
AP4953D
|
71Kb/4P |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
|
AP4953GM
|
70Kb/4P |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
|
AP4953GM
|
207Kb/5P |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
 VBsemi Electronics Co.,... |
AP4953GM
|
1Mb/9P |
Dual P-Channel 30-V (D-S) MOSFET
|
|
AP4953GM-HF
|
1Mb/9P |
Dual P-Channel 30-V (D-S) MOSFET
|
 Advanced Power Electron... |
AP4953GM-HF
|
92Kb/4P |
Simple Drive Requirement, Low Gate Charge
|
|
AP4953GM-HF
|
92Kb/4P |
Simple Drive Requirement
|
|
AP4953GM-HF
|
60Kb/5P |
Simple Drive Requirement
|
|
AP4953GM
|
207Kb/5P |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
 VBsemi Electronics Co.,... |
AP4953M
|
1Mb/9P |
Dual P-Channel 30-V (D-S) MOSFET
|
 Advanced Power Electron... |
AP4953M
|
85Kb/6P |
P-CHANNEL ENHANCEMENT MODE
|
|
AP4951GM
|
188Kb/5P |
Simple Drive Requirement, Low Gate Charge
|
 VBsemi Electronics Co.,... |
AP4951GM
|
1Mb/9P |
Dual P-Channel 6 0-V (D-S) MOSFET
|
 SHENZHEN DOINGTER SEMIC... |
AP4951GM-HF
|
398Kb/5P |
P-Channel MOSFET uses advanced trench technology
|
 Advanced Power Electron... |
AP4951GM-HF
|
102Kb/4P |
Simple Drive Requirement, Low Gate Charge, Fast Switching Performance
|
|
AP4951GM-HF
|
102Kb/4P |
Simple Drive Requirement
|
|
AP4951GM-HF
|
57Kb/5P |
Fast Switching Performance
|