| Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |
Jiangsu Donghai Semicon... |
B2N65
|
1Mb/12P
|
2A 650V N-channel Enhancement Mode Power MOSFET
|
|
B2N65
|
1Mb/12P
|
2A 650V N-channel Enhancement Mode Power MOSFET
|
|
B2N65
|
1Mb/12P
|
2A 650V N-channel Enhancement Mode Power MOSFET
|
|
B2N65
|
1Mb/12P
|
2A 650V N-channel Enhancement Mode Power MOSFET
|
|
B2N65
|
1Mb/12P
|
2A 650V N-channel Enhancement Mode Power MOSFET
|
| Search Partnumber :
Start with "B2N65" -
Total : 30 ( 1/2 Page) |
Jiangsu Donghai Semicon... |
B2N60
|
1Mb/13P |
2A 600V N-channel Enhancement Mode Power MOSFET
|
|
B2N60
|
1Mb/13P |
2A 600V N-channel Enhancement Mode Power MOSFET
|
|
B2N60
|
1Mb/13P |
2A 600V N-channel Enhancement Mode Power MOSFET
|
|
B2N60
|
1Mb/13P |
2A 600V N-channel Enhancement Mode Power MOSFET
|
|
B2N60
|
1Mb/13P |
2A 600V N-channel Enhancement Mode Power MOSFET
|
|
B2N60
|
1Mb/13P |
2A 600V N-channel Enhancement Mode Power MOSFET
|
SHENZHEN DOINGTER SEMIC... |
B2N60D
|
1Mb/5P |
N-Channel MOSFET uses advanced trench technology
|
Turck, Inc. |
B2N60H-Q20L60-2LI2-H1151
|
231Kb/3P |
Inclinometer
11/07/2023 |
|
B2N60H-Q20L60-2LU3-H1151
|
232Kb/3P |
Inclinometer
11/07/2023 |
|
B2N60H-Q20L60-2LU3/S97
|
273Kb/3P |
Inclinometer – With Increased Temperature Range
11/07/2023 |
|
B2N60H-Q20L60-2LU4-H1151
|
233Kb/3P |
Inclinometer
11/07/2023 |
|
B2N60H-Q42-CNX2-2H1150
|
134Kb/2P |
Inclinometer – With CANopen Interface
11/07/2023 |
|
B2N60H-QR20-2LI2X3-H1151
|
1Mb/3P |
Inclinometer
09/16/2023 |
|
B2N10H-Q20L60-2LI2-H1151
|
231Kb/3P |
Inclinometer
11/07/2023 |
|
B2N10H-Q20L60-2LU3-H1151
|
232Kb/3P |
Inclinometer
11/07/2023 |
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