| Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |
 Microsemi Corporation |
LX8630-33CDD
|
135Kb/9P
|
3A BiCMOS Very Low Dropout Regulators
|
| Search Partnumber :
Start with "LX8630-33CDD" -
Total : 112 ( 1/6 Page) |
 Microsemi Corporation |
LX8630-33CP
|
135Kb/9P |
3A BiCMOS Very Low Dropout Regulators
|
|
LX8630-00CDD
|
135Kb/9P |
3A BiCMOS Very Low Dropout Regulators
|
|
LX8630-00CP
|
135Kb/9P |
3A BiCMOS Very Low Dropout Regulators
|
|
LX8630-25CDD
|
135Kb/9P |
3A BiCMOS Very Low Dropout Regulators
|
|
LX8630-25CP
|
135Kb/9P |
3A BiCMOS Very Low Dropout Regulators
|
|
LX8630-XX
|
135Kb/9P |
3A BiCMOS Very Low Dropout Regulators
|
|
LX8610-00CDM
|
90Kb/6P |
1A BiCMOS Very Low Dropout Regulators
|
|
LX8610-25CDM
|
90Kb/6P |
1A BiCMOS Very Low Dropout Regulators
|
|
LX8610-25CST
|
90Kb/6P |
1A BiCMOS Very Low Dropout Regulators
|
|
LX8610-33CDM
|
90Kb/6P |
1A BiCMOS Very Low Dropout Regulators
|
|
LX8610-33CST
|
90Kb/6P |
1A BiCMOS Very Low Dropout Regulators
|
|
LX8610-XX
|
90Kb/6P |
1A BiCMOS Very Low Dropout Regulators
|
 Samsung semiconductor |
LX801S
|
209Kb/1P |
Schemat ideowy inwertera LCD Samsung
|
 Polyfet RF Devices |
LX802
|
37Kb/2P |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
|
LX802
|
62Kb/2P |
RF POWER LDMOS TRANSISTOR
|
|
LX803
|
53Kb/2P |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
 Littelfuse |
LX803DB
|
1Mb/9P |
EV Series 0.8 A Sensitive TRIACs
01/07/2026 |
|
LX803DBAP
|
1Mb/9P |
EV Series 0.8 A Sensitive TRIACs
01/07/2026 |
|
LX803DBRP
|
1Mb/9P |
EV Series 0.8 A Sensitive TRIACs
01/07/2026 |