| Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |
 E-SWITCH |
PV6
|
111Kb/1P
|
Vandal and Water Resistant, Long Life Expectancy CONTACT RESISTANCE: 50mOHM Max.
|
|
PV6
|
803Kb/2P
|
pV6 SerieS anti-Vandal Switch
|
|
PV6
|
1Mb/6P
|
PV6 Series Anti-vandal Switch
6.16.2021
|
 PANDUIT CORP. |
PV6-10R
|
58Kb/1P
|
6 BARREL V NYL INSULATED RING TONGUE 340 8.64 MAX WIRE INSUL DIAMETER
|
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PV6-12R
|
58Kb/1P
|
6 BARREL V NYL INSULATED RING TONGUE 340 8.64 MAX WIRE INSUL DIAMETER
|
|
PV6-14R
|
58Kb/1P
|
6 BARREL V NYL INSULATED RING TONGUE 340 8.64 MAX WIRE INSUL DIAMETER
|
|
PV6-38R
|
58Kb/1P
|
6 BARREL V NYL INSULATED RING TONGUE 340 8.64 MAX WIRE INSUL DIAMETER
|
|
PV6-38R-E
|
58Kb/1P
|
6 BARREL V NYL INSULATED RING TONGUE 340 8.64 MAX WIRE INSUL DIAMETER
|
|
PV6-56R
|
58Kb/1P
|
6 BARREL V NYL INSULATED RING TONGUE 340 8.64 MAX WIRE INSUL DIAMETER
|
|
PV6-8R
|
58Kb/1P
|
6 BARREL V NYL INSULATED RING TONGUE 340 8.64 MAX WIRE INSUL DIAMETER
|
 List of Unclassifed Man... |
PV60
|
46Kb/2P
|
SINGLE-PHASE FULL WAVE BRIDGE BRIDGE
|
 NIKO SEMICONDUCTOR CO.,... |
PV600BA
|
245Kb/4P
|
N-Channel Enhancement Mode Field Effect Transistor
|
 VBsemi Electronics Co.,... |
PV600BA
|
1,005Kb/9P
|
N-Channel 30-V (D-S) MOSFET
|
 Wuxi U-NIKC Semiconduct... |
PV600BA
|
775Kb/8P
|
N-Channel Enhancement Mode MOSFET
|
 NIKO SEMICONDUCTOR CO.,... |
PV601CA
|
367Kb/7P
|
N- & P-Channel Enhancement Mode Field Effect Transistor
|
 Wuxi U-NIKC Semiconduct... |
PV601CA
|
1Mb/11P
|
N&P-Channel Enhancement Mode MOSFET
|
 NIKO SEMICONDUCTOR CO.,... |
PV606BA
|
205Kb/4P
|
N-Channel Enhancement Mode Field Effect Transistor
|
|
PV608BA
|
240Kb/4P
|
N-Channel Enhancement Mode Field Effect Transistor
|
|
PV609CA
|
317Kb/7P
|
N- & P-Channel Enhancement Mode Field Effect Transistor
|
 Stackpole Electronics, ... |
PV60K3225
|
142Kb/3P
|
Low & Medium Voltage Plastic Encapsulated SMD Varistor
08/28/2019
|