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Produttore elettronici Il numero della parte Scheda tecnica Spiegazioni elettronici Renesas Technology Corp RJK6002DPE 82Kb/7P 600V - 2A - MOS FET High Speed Power Switching Inchange Semiconductor ... RJK6002DPE 327Kb/2P isc N-Channel MOSFET Transistor Renesas Technology Corp RJK6002DPE-00J3 82Kb/7P 600V - 2A - MOS FET High Speed Power Switching Search Partnumber : Start with "RJK6002DPE" - Total : 21 ( 1/2 Page) Renesas Technology Corp RJK6002DPD 74Kb/4P Silicon N Channel MOS FET High Speed Power Switching VBsemi Electronics Co.,... RJK6002DPD 1Mb/9P N-Channel 650 V (D-S) MOSFET SHENZHEN DOINGTER SEMIC... RJK6002DPD 1Mb/5P N-Channel MOSFET uses advanced trench technology Inchange Semiconductor ... RJK6002DPD 276Kb/2P isc N-Channel MOSFET Transistor Renesas Technology Corp RJK6002DPD-00-J2 74Kb/4P Silicon N Channel MOS FET High Speed Power Switching RJK6002DPD 113Kb/9P Silicon N Channel MOS FET High Speed Power Switching RJK6002DPE-00J3 82Kb/7P 600V - 2A - MOS FET High Speed Power Switching Inchange Semiconductor ... RJK6002DPH 286Kb/2P isc N-Channel MOSFET Transistor Renesas Technology Corp RJK6002DPH-E0 99Kb/7P 600V - 2A - MOS FET High Speed Power Switching RJK6002DPH-E0T2 99Kb/7P 600V - 2A - MOS FET High Speed Power Switching RJK6002DPH-E0 99Kb/7P 600V - 2A - MOS FET High Speed Power Switching RJK6002DJE 69Kb/4P 600V - 2A - MOS FET High Speed Power Switching RJK6002DJE-00Z0 69Kb/4P 600V - 2A - MOS FET High Speed Power Switching RJK6002DJE 69Kb/4P 600V - 2A - MOS FET High Speed Power Switching RJK6006DPD 80Kb/7P Silicon N Channel MOS FET High Speed Power Switching RJK6006DPD 80Kb/7P Silicon N Channel MOS FET High Speed Power Switching SHENZHEN DOINGTER SEMIC... RJK6006DPD 1Mb/5P N-Channel MOSFET uses advanced trench technology

RJK6002DPE Scheda tecnica, PDF [Reseller]

Reseller Il numero della parte Produttore elettronici Scheda tecnica Spiegazioni elettronici Buy Now Element14 RJK0330DPB-01#J0 RENESAS MOSFET, N-CH, 30V, 45A, LFPAK; RJK0330DPB-01#J0 RENESAS MOSFET, N-CH, 30V, 45A, LFPAK;

RJK6002DPE Reseller