| Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |
 Nihon Kaiheiki Industry... |
S41
|
447Kb/10P
|
Medium/High Capacity Standard Size Toggles
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S41
|
812Kb/11P
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GENERAL SPECIFICATIONS FOR S301 ~ S339
|
 List of Unclassifed Man... |
S41-1210
|
74Kb/2P
|
HIGH VOLTAGE SURFACE MOUNT MLCCS 250 - 5,000 VDC
|
 Texas Instruments |
S4100
|
315Kb/8P
|
Multi-Function Reader Module Data Sheet
|
 Rohm |
S4101
|
664Kb/13P
|
N-channel SiC power MOSFET bare die
|
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S4102
|
665Kb/13P
|
N-channel SiC power MOSFET bare die
|
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S4103
|
665Kb/13P
|
N-channel SiC power MOSFET bare die
|
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S4105
|
674Kb/13P
|
N-channel SiC power MOSFET bare die
|
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S4107
|
849Kb/12P
|
N-channel SiC power MOSFET bare die
14.Jun.2018 - Rev.001
|
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S4108
|
663Kb/13P
|
N-channel SiC power MOSFET bare die
|
 Hamamatsu Corporation |
S4111
|
138Kb/4P
|
Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR
|
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S4111-16Q
|
138Kb/4P
|
Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR
|
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S4111-16R
|
138Kb/4P
|
Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR
|
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S4111-35Q
|
138Kb/4P
|
Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR
|
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S4111-46Q
|
138Kb/4P
|
Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR
|
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S4111
|
295Kb/6P
|
Si photodiode arrays
|
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S4114-35Q
|
138Kb/4P
|
Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR
|
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S4114-46Q
|
138Kb/4P
|
Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR
|
 TE Connectivity Ltd |
S4114000010-000
|
362Kb/4P
|
T1250102125-000
08/07/2021
|
 Hollingsworth |
S4116
|
1Mb/26P
|
Ring Tongue Terminal 10-12AWG Copper Yellow 27.69mm Tin
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