| Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |
 Rohm |
SSD3
|
373Kb/8P
|
Packaging specifications
|
 SeCoS Halbleitertechnol... |
SSD3055
|
1Mb/5P
|
N-Channel Enhancement Mode Power Mos.FET
|
|
SSD3055
|
512Kb/4P
|
N-Ch Enhancement Mode Power MOSFET
|
 SHENZHEN DOINGTER SEMIC... |
SSD3055
|
756Kb/5P
|
N-Channel MOSFET uses advanced trench technology
|
 SeCoS Halbleitertechnol... |
SSD3055
|
512Kb/4P
|
N-Ch Enhancement Mode Power MOSFET
|
|
SSD30N02
|
495Kb/4P
|
N-Ch Enhancement Mode Power MOSFET
|
|
SSD30N03-40D
|
460Kb/4P
|
N-Ch Enhancement Mode Power MOSFET
|
 VBsemi Electronics Co.,... |
SSD30N03-40D
|
1,019Kb/8P
|
N-Channel 30-V (D-S) MOSFET
|
 SeCoS Halbleitertechnol... |
SSD30N03J
|
548Kb/3P
|
N-Ch Enhancement Mode Power MOSFET
|
|
SSD30N03
|
460Kb/4P
|
N-Ch Enhancement Mode Power MOSFET
|
|
SSD30N06-39D
|
393Kb/4P
|
N-Ch Enhancement Mode Power MOSFET
|
 VBsemi Electronics Co.,... |
SSD30N06-39D
|
899Kb/6P
|
N-Channel 60-V (D-S) MOSFET
|
 SeCoS Halbleitertechnol... |
SSD30N06
|
396Kb/4P
|
N-Ch Enhancement Mode Power MOSFET
|
|
SSD30N10-50D
|
188Kb/2P
|
N-Ch Enhancement Mode Power MOSFET
|
|
SSD30N10-70D
|
398Kb/4P
|
N-Ch Enhancement Mode Power MOSFET
|
 SHENZHEN DOINGTER SEMIC... |
SSD30N10-70D
|
2Mb/5P
|
N-Channel MOSFET uses advanced SGT technology
|
 SeCoS Halbleitertechnol... |
SSD30N10-78D
|
98Kb/2P
|
N-Ch Enhancement Mode Power MOSFET
|
|
SSD30N10
|
158Kb/2P
|
N-Ch Enhancement Mode Power MOSFET
|
|
SSD30N15-60D
|
445Kb/4P
|
N-Ch Enhancement Mode Power MOSFET
|
 VBsemi Electronics Co.,... |
SSD30N15-60D
|
1,004Kb/9P
|
N-Channel 150 V (D-S) MOSFET
|