| Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |
 Vishay Siliconix |
VB10150C
|
168Kb/5P
|
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A
19-May-08
|
|
VB10150C
|
161Kb/5P
|
High-Voltage Trench MOS Barrier Schottky Rectifier
24-Jun-09
|
|
VB10150C
|
723Kb/5P
|
Dual High Voltage Trench MOS Barrier Schottky Rectifier
16-Aug-13
|
 Inchange Semiconductor ... |
VB10150C-E3
|
314Kb/2P
|
Schotty Barrier Diode
|
 Vishay Siliconix |
VB10150C-E3-4W
|
161Kb/5P
|
High-Voltage Trench MOS Barrier Schottky Rectifier
24-Jun-09
|
|
VB10150C-E3-8W
|
161Kb/5P
|
High-Voltage Trench MOS Barrier Schottky Rectifier
24-Jun-09
|
|
VB10150C-E3/4W
|
168Kb/5P
|
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A
19-May-08
|
|
VB10150C-E3/4W
|
168Kb/5P
|
High-Voltage Trench MOS Barrier Schottky Rectifier
24-Jun-09
|
|
VB10150C-E3/8W
|
168Kb/5P
|
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A
19-May-08
|
|
VB10150C-E3/8W
|
168Kb/5P
|
High-Voltage Trench MOS Barrier Schottky Rectifier
24-Jun-09
|
|
VB10150C-M3
|
88Kb/4P
|
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A
30-Aug-13
|
|
VB10150C-M3
|
102Kb/4P
|
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A
19-Jun-2018
|
 Inchange Semiconductor ... |
VB10150C-M3
|
314Kb/2P
|
Schotty Barrier Diode
|
 Vishay Siliconix |
VB10150C-M3
|
78Kb/4P
|
High-Voltage Trench MOS Barrier Schottky Rectifier
30-Aug-13
|
|
VB10150C-M3
|
102Kb/4P
|
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A
19-Jun-2018
|