02FC-V1-R2 Scheda tecnica, PDF

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
WOLFSPEED, INC.	GTRA184602FC-V1-R2	693Kb/9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 460 W, 48 V, 1805 – 1880 MHz Rev. 03, 2023-03-02
	GTRA214602FC-V1-R2	522Kb/8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 490 W, 48 V, 2110 – 2170 MHz Rev. 02.1, 2022-1-27
	GTRA362002FC-V1-R2	435Kb/8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 200 W, 48 V, 3400 – 3600 MHz Rev. 06, 2023-06-23
	GTRA362802FC-V1-R2	553Kb/8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 280 W, 48 V, 3400 – 3600 MHz Rev. 04.3, 2022-1-27
	GTRA364002FC-V1-R2	511Kb/8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3400 – 3600 MHz Rev. 04.3, 2022-1-27
Cree, Inc	GTRA374902FC-V1-R2	2Mb/8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 450 W, 48 V, 3600 ??3700 MHz
WOLFSPEED, INC.	GTRA374902FC-V1-R2	459Kb/8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 450 W, 48 V, 3600 – 3700 MHz Rev. 02.2, 2022-1-27
Cree, Inc	GTRA384802FC-V1-R2	1Mb/5P	Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3600 ??3800 MHz
WOLFSPEED, INC.	GTRA384802FC-V1-R2	585Kb/9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3600 – 3800 MHz Rev. 03.1, 2022-1-27
Cree, Inc	GTVA261802FC-V1-R2	495Kb/8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 48 V, 2620 ??2690 MHz
WOLFSPEED, INC.	GTVA261802FC-V1-R2	536Kb/8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 48 V, 2620 – 2690 MHz Rev. 02.1, 2022-1-27
WOLFSPEED, INC.	GTVA263202FC-V1-R2	632Kb/8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 340 W, 48 V, 2620 – 2690 MHz Rev. 04.1, 2022-1-27
Cree, Inc	PXAC241002FC-V1-R2	279Kb/8P	Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2300 ??2400 MHz

02FC-V1-R2 Scheda tecnica, PDF

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