| Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |
 Integrated Device Techn... |
5P83908NDGK
|
373Kb/18P |
High-Performance 1.8V/2.5V/3.3V Crystal Input to LVCMOS Clock Fanout Buffer
|
 Renesas Technology Corp |
5P83908NDGK
|
567Kb/19P |
High-Performance 1.8V/2.5V/3.3V Crystal Input to LVCMOS Clock Fanout Buffer with OE
2019 |
 Integrated Device Techn... |
5P83908NDGK8
|
373Kb/18P |
High-Performance 1.8V/2.5V/3.3V Crystal Input to LVCMOS Clock Fanout Buffer
|
 Renesas Technology Corp |
5P83908NDGK8
|
567Kb/19P |
High-Performance 1.8V/2.5V/3.3V Crystal Input to LVCMOS Clock Fanout Buffer with OE
2019 |
 Chengdu Xtaltq Technolo... |
BO2020HS1C508ND100
|
384Kb/2P |
Oven Controlled Cyrstal Oscillator
|
|
BO2020HS1F508ND100
|
384Kb/2P |
Oven Controlled Cyrstal Oscillator
|
|
BO2020HS1G508ND100
|
384Kb/2P |
Oven Controlled Cyrstal Oscillator
|
|
BO2020HS1I508ND100
|
384Kb/2P |
Oven Controlled Cyrstal Oscillator
|
|
BO2020HS1U508ND100
|
384Kb/2P |
Oven Controlled Cyrstal Oscillator
|
 SICK AG |
IMB12-08NDSVC0S
|
1Mb/8P |
INDUCTIVE PROXIMITY SENSORS
|
|
IMB12-08NDSVU2K
|
1Mb/7P |
INDUCTIVE PROXIMITY SENSORS
|
|
IMB12-08NDSVU2S
|
1Mb/7P |
INDUCTIVE PROXIMITY SENSORS
|
|
IME12-08NDSZY2S
|
982Kb/6P |
INDUCTIVE PROXIMITY SENSORS
|
 GREATECS |
RD82THRS108NDTB
|
376Kb/2P |
10 x 10 mm Sealed Rotary DIP Switches (THR)
|
|
RD82THRS208NDTB
|
376Kb/2P |
10 x 10 mm Sealed Rotary DIP Switches (THR)
|
|
RD82THRS308NDTB
|
376Kb/2P |
10 x 10 mm Sealed Rotary DIP Switches (THR)
|
 TECH PUBLIC Electronics... |
TPM4408ND8-1
|
2Mb/5P |
N-Channel Enhancement Mode MOSFET
|