| Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |
Toshiba Semiconductor |
1SS250TE85L
|
185Kb/3P |
TOSHIBA Diode Silicon Epitaxial Planar Type
|
|
1SS250
|
204Kb/3P |
TOSHIBA Diode Silicon Epitaxial Planar Type
|
|
1SS200
|
127Kb/2P |
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)
07-May-1997 |
|
1SS200
|
196Kb/3P |
Ultra High Speed Switching Application
|
|
1SS200
|
196Kb/3P |
Ultra High Speed Switching Application
|
|
1SS201
|
125Kb/2P |
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)
07-May-1997 |
List of Unclassifed Man... |
1SS201
|
124Kb/2P |
SUPER HIGH SPEED SWITCHING DIODE SPECIAL DESIGN FOR PROTECTING SOLAR BATTERY
|
Toshiba Semiconductor |
1SS201
|
193Kb/3P |
Ultra High Speed Switching Application
|
|
1SS201
|
193Kb/3P |
Ultra High Speed Switching Application
|
NEC |
1SS220
|
215Kb/4P |
SILICON SWITCHING DIODES
|
Guangdong Kexin Industr... |
1SS220
|
37Kb/1P |
SILICON SWITCHING DIODE
|
Renesas Technology Corp |
1SS220
|
377Kb/6P |
SILICON SWITCHING DIODES
1985 |
NEC |
1SS221
|
215Kb/4P |
SILICON SWITCHING DIODES
|
Guangdong Kexin Industr... |
1SS221
|
37Kb/1P |
SILICON SWITCHING DIODE
|
NEC |
1SS222
|
207Kb/4P |
SILICON SWITCHING DIODES
|
Guangdong Kexin Industr... |
1SS222
|
36Kb/1P |
SILICON SWITCHING DIODE
|
Renesas Technology Corp |
1SS222
|
369Kb/6P |
SILICON SWITCHING DIODES
1985 |
NEC |
1SS223
|
207Kb/4P |
SILICON SWITCHING DIODES
|
Guangdong Kexin Industr... |
1SS223
|
37Kb/1P |
SILICON SWITCHING DIODE
|
Renesas Technology Corp |
1SS223
|
369Kb/6P |
SILICON SWITCHING DIODES
1985 |
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