| Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |
GE Solid State |
2N4101
|
135Kb/3P |
5-A SILICON CONTROLLED RECTIFIERS
|
New Jersey Semi-Conduct... |
2N4101
|
244Kb/3P |
SPRINGFIELD, NEW JERSEY 07081
|
|
2N4101
|
95Kb/1P |
SCR, V(DRM) = 600V TO 699.9V
|
|
2N4102
|
244Kb/3P |
SPRINGFIELD, NEW JERSEY 07081
|
|
2N4102
|
115Kb/1P |
SCR, V(DRM) = 600V TO 699.9V
|
|
2N4102
|
94Kb/1P |
5-A Silicon Controlled Rectifiers
|
General Semiconductor |
2N4103
|
229Kb/4P |
12.5A SILICON CONTROLLED RECTIFIERS
|
Central Semiconductor C... |
2N4103
|
60Kb/1P |
SILICON CONTROLLED RECTIFIER 16AMPS 220 THRU 800 VOLTS JEDEC TO-3 CASE
|
Digitron Semiconductors |
2N4103
|
1Mb/3P |
12.5A SILICON CONTROLLED RECTIFIER
|
Seme LAB |
2N4104
|
10Kb/1P |
Bipolar NPN Device
|
New Jersey Semi-Conduct... |
2N4108
|
82Kb/1P |
SCR, V(DRM) = 50V TO 99.9V
|
List of Unclassifed Man... |
2N411
|
2Mb/6P |
GERMANIUM PNP TRANSISTORS
|
Seme LAB |
2N4111
|
14Kb/1P |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
|
Inchange Semiconductor ... |
2N4111
|
256Kb/2P |
isc Silicon NPN Power Transistor
|
Seme LAB |
2N4112
|
14Kb/1P |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
|
Inchange Semiconductor ... |
2N4112
|
256Kb/2P |
isc Silicon NPN Power Transistor
|
Seme LAB |
2N4113
|
11Kb/1P |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
|
Inchange Semiconductor ... |
2N4113
|
257Kb/2P |
isc Silicon NPN Power Transistor
|
Seme LAB |
2N4114
|
12Kb/1P |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
|
Inchange Semiconductor ... |
2N4114
|
256Kb/2P |
isc Silicon NPN Power Transistor
|
Italian ▼ 
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand