| Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |
Toshiba Semiconductor |
2SA1971
|
156Kb/3P |
TRANSISTOR (HIGH VOLTAGE SWITCHING APPLICATIONS)
|
Guangdong Kexin Industr... |
2SA1971
|
54Kb/1P |
Silicon PNP Triple Diffused Type
|
Toshiba Semiconductor |
2SA1971
|
166Kb/4P |
High-Voltage Switching Applications
|
|
2SA1971
|
1Mb/73P |
Bipolar Small-Signal Transistors
|
|
2SA1971
|
166Kb/4P |
High-Voltage Switching Applications
|
|
2SA1972
|
152Kb/3P |
TRANSISTOR (HIGH VOLTAGE SWITCHING APPLICATIONS)
|
|
2SA1972
|
150Kb/4P |
High-Voltage Switching Applications
|
|
2SA1972
|
169Kb/4P |
High-Voltage Switching Applications
|
|
2SA1972
|
1Mb/73P |
Bipolar Small-Signal Transistors
|
|
2SA1972
|
150Kb/4P |
High-Voltage Switching Applications
|
|
2SA1972
|
169Kb/4P |
High-Voltage Switching Applications
|
Sanyo Semicon Device |
2SA1973
|
44Kb/4P |
DC/DC Converter Applications
|
NEC |
2SA1977
|
58Kb/7P |
PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER
|
Guangdong Kexin Industr... |
2SA1977
|
36Kb/1P |
PNP Epitaxial Silicon Transistor
|
Renesas Technology Corp |
2SA1977
|
191Kb/14P |
PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER
|
California Eastern Labs |
2SA1977
|
1Mb/12P |
PNP EPITAXIAL SILICON TRANSISTOR
|
Renesas Technology Corp |
2SA1977-T1B-A
|
191Kb/14P |
PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER
|
|
2SA1977
|
191Kb/14P |
PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER
|
|
2SA1978
|
193Kb/12P |
PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER
|
AUK corp |
2SA1979
|
239Kb/4P |
PNP Silicon Transistor (Medium power amplifier)
|
Italian ▼ 
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand