| Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |
Usha India Ltd. |
2SA539O
|
81Kb/2P |
LOW FREQUENCY AMPLIFIER
|
|
2SA539R
|
81Kb/2P |
LOW FREQUENCY AMPLIFIER
|
|
2SA539Y
|
81Kb/2P |
LOW FREQUENCY AMPLIFIER
|
Toshiba Semiconductor |
2SA500
|
176Kb/5P |
SILICON PNP EPITAXIAL TRANSISTOP
|
|
2SA500-O
|
176Kb/5P |
SILICON PNP EPITAXIAL TRANSISTOP
|
|
2SA500-Y
|
176Kb/5P |
SILICON PNP EPITAXIAL TRANSISTOP
|
New Jersey Semi-Conduct... |
2SA503
|
145Kb/1P |
SILICON PNP EPITAXIAL
|
|
2SA503
|
145Kb/1P |
SILICON PNP EPITAXIAL
|
|
2SA504
|
145Kb/1P |
SILICON PNP EPITAXIAL
|
|
2SA504
|
145Kb/1P |
SILICON PNP EPITAXIAL
|
Toshiba Semiconductor |
2SA505
|
94Kb/2P |
SILICON PNP EPITAXIAL TYPE(PCT PROCESS)
|
Inchange Semiconductor ... |
2SA505
|
108Kb/2P |
Collector-Emitter Breakdown Voltage- V(BR)CEO= -50V (Min.)
|
New Jersey Semi-Conduct... |
2SA505
|
126Kb/2P |
Silicon PNP Power Transistor
|
Toshiba Semiconductor |
2SA510
|
126Kb/3P |
SILICON PNP EPITAXIAL TYPE
|
|
2SA512
|
126Kb/3P |
SILICON PNP EPITAXIAL TYPE
|
List of Unclassifed Man... |
2SA52
|
47Kb/1P |
GERMANIUM PNP ALLOY JUNCTION TRANSISTOR
|
Usha India Ltd. |
2SA542
|
86Kb/2P |
LOW FREQUENCY AMPLIFIER
|
Jiangsu Changjiang Elec... |
2SA554
|
3Mb/4P |
SOT-89-3L Plastic-Encapsulate Transistors
|
SeCoS Halbleitertechnol... |
2SA554
|
344Kb/2P |
-2A, -100V P P Epitaxial Planar Transistor
|
Nanjing International G... |
2SA554
|
1Mb/4P |
SOT-89-3L Plastic-Encapsulate Transistors
|
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