| Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |
Toshiba Semiconductor |
2SC3669
|
176Kb/4P |
NPN EPITAXIAL TYPE (POWER AMPLIFIER, SWITCHING APPLICATIONS)
|
Unisonic Technologies |
2SC3669
|
119Kb/3P |
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS
|
Toshiba Semiconductor |
2SC3669
|
140Kb/5P |
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Power Amplifier Applications Power Switching Applications
|
Unisonic Technologies |
2SC3669
|
123Kb/3P |
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS
|
|
2SC3669G-X-AA3-R
|
294Kb/4P |
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS
|
|
2SC3669G-X-AB3-R
|
294Kb/4P |
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS
|
|
2SC3669G-X-TM3-T
|
294Kb/4P |
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS
|
|
2SC3669G-X-TN3-R
|
294Kb/4P |
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS
|
|
2SC3669L-X-TM3-T
|
294Kb/4P |
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS
|
|
2SC3669L-X-TN3-R
|
294Kb/4P |
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS
|
Toshiba Semiconductor |
2SC3669
|
140Kb/5P |
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Power Amplifier Applications Power Switching Applications
|
Unisonic Technologies |
2SC3669
|
294Kb/4P |
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS
|
|
2SC3669
|
123Kb/3P |
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS
|
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