| Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |
 Toshiba Semiconductor |
2SC3710
|
213Kb/4P |
NPN EPITAXIAL TYPE (HIGH CURRENT SWITCHING APPLICATIONS)
|
 Savantic, Inc. |
2SC3710
|
164Kb/4P |
Silicon NPN Power Transistors
|
 Quanzhou Jinmei Electro... |
2SC3710
|
35Kb/1P |
Silicon NPN Transistors
|
 Savantic, Inc. |
2SC3710
|
165Kb/4P |
Silicon NPN Power Transistors
|
 Quanzhou Jinmei Electro... |
2SC3710
|
35Kb/1P |
2SC3710_15
|
 Toshiba Semiconductor |
2SC3710A
|
226Kb/5P |
HIGH CURRENT SWITCHING APPLICATIONS
|
|
2SC3710A
|
146Kb/5P |
High-Current Switching Applications
|
|
2SC3710A
|
170Kb/5P |
High-Power Switching Applications
|
 Inchange Semiconductor ... |
2SC3710A
|
223Kb/2P |
isc Silicon NPN Power Transistor
|
 Toshiba Semiconductor |
2SC3710A-YF
|
170Kb/5P |
High-Power Switching Applications
|
|
2SC3710A
|
146Kb/5P |
High-Current Switching Applications
|
 Quanzhou Jinmei Electro... |
2SC3710
|
35Kb/1P |
2SC3710_15
|
|
2SC3710_2014
|
35Kb/1P |
Power Transistors
|