| Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |
NEC |
2SC5337
|
59Kb/8P |
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
|
Renesas Technology Corp |
2SC5337
|
104Kb/7P |
NPN Silicon RF Transistor for High-Frequency
|
California Eastern Labs |
2SC5337
|
877Kb/6P |
NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold
|
Renesas Technology Corp |
2SC5337-A
|
137Kb/2P |
RF & Microwave device
|
|
2SC5337-AZ
|
104Kb/7P |
NPN Silicon RF Transistor for High-Frequency
|
California Eastern Labs |
2SC5337-AZ
|
877Kb/6P |
NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold
|
Renesas Technology Corp |
2SC5337-T1
|
104Kb/7P |
NPN Silicon RF Transistor for High-Frequency
|
California Eastern Labs |
2SC5337-T1
|
877Kb/6P |
NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold
|
Renesas Technology Corp |
2SC5337-T1-AZ
|
104Kb/7P |
NPN Silicon RF Transistor for High-Frequency
|
California Eastern Labs |
2SC5337-T1-AZ
|
877Kb/6P |
NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold
|
Renesas Technology Corp |
2SC5337
|
99Kb/7P |
NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold
|
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