| Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |
Hitachi Semiconductor |
2SJ350
|
47Kb/9P |
Silicon P-Channel MOS FET
|
Renesas Technology Corp |
2SJ350
|
82Kb/7P |
Silicon P Channel MOS FET
|
VBsemi Electronics Co.,... |
2SJ350
|
1Mb/7P |
P-Channel 100 V (D-S) MOSFET
|
Inchange Semiconductor ... |
2SJ350
|
295Kb/2P |
isc P-Channel MOSFET Transistor
|
Renesas Technology Corp |
2SJ350-E
|
82Kb/7P |
Silicon P Channel MOS FET
|
Guangdong Kexin Industr... |
2SJ3501
|
523Kb/4P |
P-Channel MOSFET
|
Hitachi Semiconductor |
2SJ351
|
40Kb/8P |
Silicon P-Channel MOS FET
|
Renesas Technology Corp |
2SJ351
|
70Kb/6P |
Silicon P Channel MOS FET
|
|
2SJ351-E
|
70Kb/6P |
Silicon P Channel MOS FET
|
|
2SJ351
|
89Kb/8P |
Silicon P Channel MOS FET
|
Hitachi Semiconductor |
2SJ352
|
40Kb/8P |
Silicon P-Channel MOS FET
|
Renesas Technology Corp |
2SJ352
|
70Kb/6P |
Silicon P Channel MOS FET
|
|
2SJ352-E
|
70Kb/6P |
Silicon P Channel MOS FET
|
NEC |
2SJ353
|
58Kb/6P |
P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
|
Renesas Technology Corp |
2SJ353
|
204Kb/8P |
MOS FIELD EFFECT TRANSISTOR
1996 |
NEC |
2SJ355
|
67Kb/6P |
P-CHANNEL MOS FET FOR HIGH SWITCHING
|
VBsemi Electronics Co.,... |
2SJ355
|
985Kb/8P |
P-Channel 30-V (D-S) MOSFET
|
Renesas Technology Corp |
2SJ355
|
268Kb/8P |
MOS FIELD EFFECT TRANSISTOR
1996 |
TECH PUBLIC Electronics... |
2SJ356-TP
|
3Mb/5P |
P-Channel Enhancement MOSFET
|
Renesas Technology Corp |
2SJ356C
|
246Kb/8P |
P-CHANNEL MOSFET FOR SWITCHING
|
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