| Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |
Hitachi Semiconductor |
2SJ410
|
29Kb/6P |
Silicon P-Channel MOS FET
|
Renesas Technology Corp |
2SJ410
|
1Mb/5P |
Silicon P Channel MOS FET
|
Inchange Semiconductor ... |
2SJ410
|
296Kb/2P |
isc P-Channel MOSFET Transistor
|
Renesas Technology Corp |
2SJ410-E
|
1Mb/5P |
Silicon P Channel MOS FET
|
NEC |
2SJ411
|
70Kb/6P |
P-CHANNEL SIGNAL MOS FET FOR SWITCHING
|
Renesas Technology Corp |
2SJ411
|
216Kb/8P |
MOS FIELD EFFECT TRANSISTOR
1996 |
Toshiba Semiconductor |
2SJ412
|
291Kb/5P |
P CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS)
26-May-1999 |
|
2SJ412
|
196Kb/6P |
DC-DC Converter, Relay Drive and Motor Drive Applications
|
|
2SJ412
|
1Mb/73P |
Bipolar Small-Signal Transistors
|
|
2SJ412
|
196Kb/6P |
DC-DC Converter, Relay Drive and Motor Drive Applications
|
Sanyo Semicon Device |
2SJ413
|
79Kb/4P |
Ultrahigh-Speed Switching Applications
|
|
2SJ415
|
187Kb/3P |
General-Purpose Switching Device Applications
|
|
2SJ416
|
90Kb/3P |
Ultrahigh-Speed Switching Applications
|
|
2SJ417
|
89Kb/3P |
Ultrahigh-Speed Switching Applications
|
|
2SJ418
|
127Kb/4P |
Ultrahigh-Speed Switching Applications
|
|
2SJ419
|
89Kb/3P |
Ultrahigh-Speed Switching Applications
|
|
2SJ400
|
43Kb/4P |
Ultrahigh-Speed Switching Applications
|
Toshiba Semiconductor |
2SJ401
|
286Kb/5P |
P CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS)
|
|
2SJ401
|
784Kb/6P |
DC−DC Converter, Relay Drive and Motor Drive Applications
|
|
2SJ401
|
461Kb/6P |
DC−DC Converter, Relay Drive and Motor Drive Applications
|
Italian ▼ 
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand