| Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |
Sanyo Semicon Device |
2SJ670
|
42Kb/4P |
P-Channel Silicon MOSFET General-Purpose Switching Device
|
Renesas Technology Corp |
2SJ673
|
288Kb/10P |
Old Company Name in Catalogs and Other Documents
|
Inchange Semiconductor ... |
2SJ673
|
297Kb/2P |
isc P-Channel MOSFET Transistor
|
Renesas Technology Corp |
2SJ673
|
288Kb/10P |
SWITCHING P-CHANNEL POWER MOS FET
|
Toshiba Semiconductor |
2SJ676
|
141Kb/3P |
Switching Regulator, DC/DC Converter and
|
NEC |
2SJ600
|
40Kb/4P |
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
|
Guangdong Kexin Industr... |
2SJ600
|
51Kb/2P |
MOS Field Effect Transistor
|
VBsemi Electronics Co.,... |
2SJ600
|
993Kb/7P |
P-Channel 60 V (D-S) MOSFET
|
Renesas Technology Corp |
2SJ600
|
246Kb/10P |
MOS FIELD EFFECT TRANSISTOR
2001 |
NEC |
2SJ600-Z
|
40Kb/4P |
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
|
Guangdong Kexin Industr... |
2SJ600-Z
|
964Kb/2P |
P-Channel MOSFET
|
Renesas Technology Corp |
2SJ600-Z
|
246Kb/10P |
MOS FIELD EFFECT TRANSISTOR
2001 |
VBsemi Electronics Co.,... |
2SJ600-Z-E1-AZ
|
1Mb/8P |
P-Channel 60 V (D-S) MOSFET
|
Guangdong Kexin Industr... |
2SJ600-Z
|
964Kb/2P |
P-Channel MOSFET
|
Renesas Technology Corp |
2SJ600
|
247Kb/10P |
SWITCHING P-CHANNEL POWER MOS FET
|
NEC |
2SJ601
|
54Kb/4P |
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
|
Guangdong Kexin Industr... |
2SJ601
|
51Kb/2P |
MOS Field Effect Transistor
|
SHENZHEN DOINGTER SEMIC... |
2SJ601
|
1Mb/4P |
P-Channel MOSFET uses advanced trench technology
|
Renesas Technology Corp |
2SJ601
|
238Kb/10P |
MOS FIELD EFFECT TRANSISTOR
2001 |
TECH PUBLIC Electronics... |
2SJ601
|
2Mb/5P |
P-Channel 60-V (D-S) MOSFET
|
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