| Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |
 JILIN SINO-MICROELECTRO... |
3DD4613H-R-T-B-A
|
230Kb/5P |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
|
|
3DD4613H-R-T-N-C
|
230Kb/5P |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
|
|
3DD4623H-R-M-N-B
|
251Kb/6P |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
|
|
3DD4623H-R-M-N-C
|
251Kb/6P |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
|
|
3DD4623H-R-T-B-A
|
251Kb/6P |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
|
|
3DD4623H-R-T-N-C
|
251Kb/6P |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
|
 M-System Co.,Ltd. |
CVR1-3H-R/CE
|
111Kb/4P |
Plug-in Signal Conditioners M-UNIT
|
 Samsung semiconductor |
K4M281633H-RF1H
|
114Kb/12P |
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
|
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K4M281633H-RF1L
|
114Kb/12P |
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
|
|
K4M281633H-RF75
|
114Kb/12P |
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
|
|
K4M281633H-RG1H
|
114Kb/12P |
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
|
|
K4M281633H-RG1L
|
114Kb/12P |
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
|
|
K4M281633H-RG75
|
114Kb/12P |
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
|
|
K4M281633H-RL1H
|
114Kb/12P |
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
|
|
K4M281633H-RL1L
|
114Kb/12P |
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
|
|
K4M281633H-RL75
|
114Kb/12P |
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
|
|
K4M281633H-RN1H
|
114Kb/12P |
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
|
|
K4M281633H-RN1L
|
114Kb/12P |
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
|
|
K4M281633H-RN75
|
114Kb/12P |
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
|
|
K4S641633H-RBE
|
112Kb/12P |
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
|