A2G-R Scheda tecnica, PDF

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
NXP Semiconductors	A2G22S160-01S	815Kb/18P	RF Power GaN Transistor Rev. 0, 5/2015
	A2G22S160-01S	761Kb/18P	1800–2200 MHz, 32 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR Rev. 1, 01/2022
	A2G22S160-01SR3	815Kb/18P	RF Power GaN Transistor Rev. 0, 5/2015
	A2G22S160-01SR3	761Kb/18P	1800–2200 MHz, 32 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR Rev. 1, 01/2022
	A2G22S190-01S	188Kb/9P	RF Power GaN Transistor
	A2G22S190-01SR3	188Kb/9P	RF Power GaN Transistor
	A2G22S251-01S	297Kb/13P	RF Power GaN Transistor Rev. 0, 5/2016
	A2G22S251-01SR3	297Kb/13P	RF Power GaN Transistor Rev. 0, 5/2016
	A2G26H281-04S	270Kb/10P	RF Power GaN Transistor Rev. 1, 02/2017
	A2G26H281-04SR3	270Kb/10P	RF Power GaN Transistor Rev. 1, 02/2017
	A2G35S160-01S	325Kb/10P	RF Power GaN Transistor Rev. 0, 5/2016
	A2G35S160-01SR3	325Kb/10P	RF Power GaN Transistor Rev. 0, 5/2016
	A2G35S200-01S	344Kb/10P	RF Power GaN Transistor Rev. 0, 5/2016
	A2G35S200-01SR3	344Kb/10P	RF Power GaN Transistor Rev. 0, 5/2016

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