| Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |
Advanced Power Electron... |
AP01N60H
|
61Kb/4P |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
VBsemi Electronics Co.,... |
AP01N60H
|
1Mb/9P |
N-Channel 650 V (D-S) MOSFET
|
Advanced Power Electron... |
AP01N60H,J-HF
|
103Kb/4P |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
VBsemi Electronics Co.,... |
AP01N60H-HF
|
1Mb/9P |
N-Channel 650 V (D-S) MOSFET
|
Advanced Power Electron... |
AP01N60J
|
61Kb/4P |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
|
AP01N60J-HF
|
100Kb/5P |
Fast Switching Characteristics
|
|
AP01N15GK-HF
|
95Kb/4P |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
|
AP01N40G-HF
|
61Kb/4P |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
|
AP01N40J
|
72Kb/4P |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
ON Semiconductor |
AP0100CS
|
3Mb/73P |
High-Dynamic Range (HDR) Image Signal Processor (ISP)
Rev. 6, 1/16 EN |
|
AP0100CS2L00SPGAD3-GEVK
|
3Mb/73P |
High-Dynamic Range (HDR) Image Signal Processor (ISP)
Rev. 6, 1/16 EN |
|
AP0100CS2L00SPGAH-GEVB
|
3Mb/73P |
High-Dynamic Range (HDR) Image Signal Processor (ISP)
Rev. 6, 1/16 EN |
|
AP0100CS2L00SUGA0-DR1
|
3Mb/73P |
High-Dynamic Range (HDR) Image Signal Processor (ISP)
Rev. 6, 1/16 EN |
|
AP0101CS
|
2Mb/42P |
High-Dynamic Range (HDR) Image Signal Processor (ISP)
Rev. 7, 1/16 EN |
|
AP0101CS2L00SPGA0-DR1
|
2Mb/42P |
High-Dynamic Range (HDR) Image Signal Processor (ISP)
Rev. 7, 1/16 EN |
|
AP0101CS2L00SPGAD3-GEVK
|
2Mb/42P |
High-Dynamic Range (HDR) Image Signal Processor (ISP)
Rev. 7, 1/16 EN |
|
AP0101CS2L00SPGAH-GEVB
|
2Mb/42P |
High-Dynamic Range (HDR) Image Signal Processor (ISP)
Rev. 7, 1/16 EN |
Advanced Power Electron... |
AP0103GMT-HF
|
101Kb/4P |
Simple Drive Requirement, SO-8 Compatible with Heatsink
|
|
AP0103GMT-HF
|
101Kb/4P |
Simple Drive Requirement
|
|
AP0103GMT-HF
|
53Kb/5P |
Simple Drive Requirement
|
Italian ▼ 
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand