| Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |
A POWER MICROELECTRONIC... |
AP40G03GD
|
859Kb/10P |
30V N+P-Channel Enhancement Mode MOSFET
REV1.0 |
|
AP40G03NF
|
1Mb/10P |
30V N+P-Channel Enhancement Mode MOSFET
|
|
AP40G04GD
|
1Mb/10P |
40V N+P-Channel Enhancement Mode MOSFET
REV1.1 |
|
AP40G04NF
|
1Mb/10P |
40V N+P-Channel Enhancement Mode MOSFET
|
Advanced Power Electron... |
AP40G120W
|
99Kb/3P |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
|
|
AP40G120W
|
99Kb/3P |
Advanced IGBT Technology
|
NEC |
AP400
|
394Kb/4P |
On-site wireless telephony on your IP Network
|
LEM |
AP400-B10
|
56Kb/2P |
AC Current transducer AP-B10
|
|
AP400-B420L
|
56Kb/2P |
AC Current transducer AP-B420L
|
Extreme Networks. |
AP4000
|
484Kb/11P |
Wi-Fi 6E Tri-Radio Indoor Access Point with Support for Multiple Extreme Operating Systems
2oct24 |
|
AP4000-1-WW
|
484Kb/11P |
Wi-Fi 6E Tri-Radio Indoor Access Point with Support for Multiple Extreme Operating Systems
2oct24 |
|
AP4000-IL
|
484Kb/11P |
Wi-Fi 6E Tri-Radio Indoor Access Point with Support for Multiple Extreme Operating Systems
2oct24 |
|
AP4000-WW
|
484Kb/11P |
Wi-Fi 6E Tri-Radio Indoor Access Point with Support for Multiple Extreme Operating Systems
2oct24 |
Advanced Power Electron... |
AP4002H,J
|
66Kb/4P |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
|
AP4002H-HF
|
66Kb/5P |
Fast Switching Characteristics
|
SHENZHEN DOINGTER SEMIC... |
AP4002H-HF
|
836Kb/5P |
N-Channel MOSFET uses advanced trench technology
|
Advanced Power Electron... |
AP4002H-HF
|
67Kb/4P |
Fast Switching Characteristics
|
|
AP4002H-HF
|
67Kb/4P |
Fast Switching Characteristics
|
|
AP4002H-HF
|
66Kb/5P |
Fast Switching Characteristics
|
|
AP4002I-HF
|
100Kb/4P |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
Italian ▼ 
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand