| Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |
 Advanced Power Electron... |
AP4226AGM
|
124Kb/4P |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
|
AP4226AGM-HF
|
100Kb/4P |
Simple Drive Requirement
|
|
AP4226AGM-HF
|
98Kb/5P |
Simple Drive Requirement
|
|
AP4226BGM-HF
|
103Kb/4P |
Lower On-resistance, Simple Drive Requirement
|
 SHENZHEN DOINGTER SEMIC... |
AP4226BGM-HF
|
1Mb/4P |
N-Channel MOSFET uses advanced trench technology
|
 Advanced Power Electron... |
AP4226BGM-HF
|
103Kb/4P |
Simple Drive Requirement
|
|
AP4226D
|
71Kb/4P |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
|
AP4226GM
|
71Kb/4P |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
|
AP4226GM-HF
|
67Kb/4P |
Low On-Resistance, Simple Drive Requirement
|
|
AP4226GM-HF
|
56Kb/4P |
Low On-Resistance
|
|
AP4226GM-HF
|
63Kb/5P |
Simple Drive Requirement
|
 Hammond Manufacturing L... |
AP4224
|
53Kb/1P |
Panels for N1A Series Enclosures
|
 Advanced Power Electron... |
AP4224AGM
|
99Kb/4P |
Simple Drive Requirement
|
|
AP4224GM
|
96Kb/4P |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
 BYCHIP ELECTRONICS CO.,... |
AP4224GM
|
1Mb/4P |
Dual N-channel Enhancement Mode Power MOSFET
v1.0 |
 Advanced Power Electron... |
AP4224GM-HF
|
101Kb/4P |
Simple Drive Requirement
|
|
AP4224GM-HF
|
104Kb/5P |
Simple Drive Requirement
|
|
AP4224LGM-HF
|
80Kb/2P |
Low On-Resistance, Capable of 2.5V Gate Drive
|
 SHENZHEN DOINGTER SEMIC... |
AP4224LGM-HF
|
1Mb/4P |
Dual N-Channel MOSFET uses advanced trench technology
|
 Advanced Power Electron... |
AP4224LGM-HF
|
80Kb/2P |
Low On-Resistance
|