| Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |
Microsemi Corporation |
APT100S20BG
|
1Mb/4P |
HIGH VOLTAGE SCHOTTKY DIODE
|
Inchange Semiconductor ... |
APT100S20BG
|
308Kb/2P |
HIGH VOLTAGE SCHOTTKY DIODE
|
Advanced Power Technolo... |
APT100S20LCT
|
36Kb/2P |
HIGH VOLTAGE SCHOTTKY DIODES
|
Microsemi Corporation |
APT100S20LCT
|
201Kb/4P |
HIGH VOLTAGE SCHOTTKY DIODE
|
Inchange Semiconductor ... |
APT100S20LCT
|
240Kb/2P |
Schottky Diode
|
|
APT100-101DN
|
326Kb/2P |
isc N-Channel MOSFET Transistor
|
Advanced Power Technolo... |
APT1001
|
35Kb/2P |
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
|
|
APT1001
|
50Kb/4P |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
Inchange Semiconductor ... |
APT1001R1AN
|
309Kb/2P |
isc N-Channel MOSFET Transistor
|
Advanced Power Technolo... |
APT1001R1AVR
|
68Kb/4P |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
|
|
APT1001R1BN
|
52Kb/4P |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
Inchange Semiconductor ... |
APT1001R1BN
|
359Kb/2P |
isc N-Channel MOSFET Transistor
|
|
APT1001R1BNR
|
371Kb/2P |
isc N-Channel MOSFET Transistor
|
Advanced Power Technolo... |
APT1001R1BVFR
|
70Kb/4P |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Inchange Semiconductor ... |
APT1001R1DN
|
326Kb/2P |
isc N-Channel MOSFET Transistor
|
|
APT1001R1GN
|
331Kb/2P |
isc N-Channel MOSFET Transistor
|
|
APT1001R1HN
|
297Kb/2P |
isc N-Channel MOSFET Transistor
|
Advanced Power Technolo... |
APT1001R1HVR
|
66Kb/4P |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Inchange Semiconductor ... |
APT1001R2AN
|
309Kb/2P |
isc N-Channel MOSFET Transistor
|
|
APT1001R2BN
|
359Kb/2P |
isc N-Channel MOSFET Transistor
|
Italian ▼ 
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand