| Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |
 Alpha Wire |
C162
|
388Kb/4P |
RoHS-Compliant Commencing With 5/1/2004 Production
|
 Time Electronics Ltd. |
C162
|
519Kb/3P |
5075 Precision Digital Multimeter
01/23 |
 Ledil, Inc. |
C16220
|
3Mb/6P |
Asymmetric IESNA Type I (short) beam designed for tilted poles
|
|
C16226
|
4Mb/7P |
Fulfils EN13201 M-class requirements where road width is equal to or less the pole height.
|
 MAKO SEMICONDUCTOR CO.,... |
C1623
|
107Kb/2P |
High DC current gain hFE 200(Typ)VCE 6V, IC 1mA
|
 Ledil, Inc. |
C16248
|
1Mb/4P |
Wide IESNA Type IV beam with forward-throw beam for wide area lighting like car parks.
|
|
C16254
|
1Mb/5P |
Wide IESNA Type IV beam with forward-throw beam for wide area lighting like car parks.
|
|
C16255
|
2Mb/4P |
~14째 smooth spot beam
|
|
C16263
|
2Mb/5P |
~25째 spot beam compatible
|
|
C16264
|
2Mb/5P |
~35째 medium beam compatible
|
|
C16265
|
2Mb/5P |
~60째 wide beam compatible
|
 Toshiba Semiconductor |
C1627
|
367Kb/3P |
Silicon NPN Epitaxial Type (PCT process)
|
|
C1627A
|
367Kb/3P |
Silicon NPN Epitaxial Type (PCT process)
|
 Ledil, Inc. |
C16280
|
908Kb/3P |
IESNA Type III (medium) beam
|