| Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |
 Diodes Incorporated |
DMN10H099SFG-13
|
265Kb/6P |
100V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI짰
Rev 2 |
|
DMN10H099SFG-13
|
265Kb/6P |
Qualified to AEC-Q101 Standards for High Reliability
Rev 2 |
|
DMN10H099SFG-7
|
265Kb/6P |
100V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI짰
Rev 2 |
|
DMN10H099SFG-7
|
265Kb/6P |
Qualified to AEC-Q101 Standards for High Reliability
Rev 2 |
|
DMN10H099SFGQ
|
285Kb/6P |
100V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI®
January 2015 Rev. 1 - 2 |
|
DMN10H099SFGQ-13
|
285Kb/6P |
100V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI®
January 2015 Rev. 1 - 2 |
|
DMN10H099SFGQ-7
|
285Kb/6P |
100V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI®
January 2015 Rev. 1 - 2 |
|
DMN10H099SFG
|
265Kb/6P |
100V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI짰
Rev 2 |
|
DMN10H099SK3
|
361Kb/6P |
Halogen and Antimony Free. ?쏥reen??Device (Note 3)
Rev 2 |
 Inchange Semiconductor ... |
DMN10H099SK3
|
310Kb/2P |
isc N-Channel MOSFET Transistor
|
 Diodes Incorporated |
DMN10H099SK3-13
|
361Kb/6P |
Halogen and Antimony Free. ?쏥reen??Device (Note 3)
Rev 2 |
|
DMN10H099SK3
|
361Kb/6P |
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Rev 2 |
|
DMN10H100SK3
|
541Kb/7P |
Halogen and Antimony Free. ?쏥reen??Device (Note 3)
Rev 2 |
 Inchange Semiconductor ... |
DMN10H100SK3
|
309Kb/2P |
isc N-Channel MOSFET Transistor
|
 Diodes Incorporated |
DMN10H100SK3-13
|
541Kb/7P |
Halogen and Antimony Free. ?쏥reen??Device (Note 3)
Rev 2 |
|
DMN10H100SK3
|
541Kb/7P |
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Rev 2 |
|
DMN10H120SE
|
428Kb/6P |
Low On-Resistance
Rev 3 |
|
DMN10H120SE-13
|
428Kb/6P |
Low On-Resistance
Rev 3 |
 TECH PUBLIC Electronics... |
DMN10H120SE-TP
|
1Mb/4P |
N-Channel Enhancement Mode Power MOSFET
|
 Diodes Incorporated |
DMN10H120SE
|
428Kb/6P |
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Rev 3 |