| Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |
Frontier Electronics. |
GT60-005
|
121Kb/2P |
6A GENERAL PURPOSE PLASTIC RECTIFIER
|
Goford Semiconductor |
GT600P15M
|
1Mb/6P |
P-Channel Enhancement Mode Power MOSFET
|
|
GT600P15MA
|
1Mb/6P |
P-Channel Enhancement Mode Power MOSFET
|
TAITRON Components Inco... |
GT605G
|
147Kb/3P |
6 Amp Glass Passivated Quick Connect Rectifier
|
Toshiba Semiconductor |
GT60J101
|
835Kb/16P |
Discrete IGBTs
|
|
GT60J321
|
183Kb/6P |
The 4th Generation Soft Switching Applications
|
|
GT60J321
|
1Mb/73P |
Bipolar Small-Signal Transistors
|
|
GT60J322
|
277Kb/6P |
The 4th Generation Soft Switching Applications
18-Jan-2002 |
|
GT60J322
|
835Kb/16P |
Discrete IGBTs
|
|
GT60J323
|
175Kb/6P |
Gate Bipolar Transistor Silicon N Channel IGBT
|
|
GT60J323
|
182Kb/6P |
Current Resonance Inverter Switching Application
|
|
GT60J323
|
1Mb/73P |
Bipolar Small-Signal Transistors
|
|
GT60J323H
|
182Kb/6P |
Current Resonance Inverter Switching Application
|
|
GT60J323H
|
1Mb/73P |
Bipolar Small-Signal Transistors
|
|
GT60M101
|
835Kb/16P |
Discrete IGBTs
|
|
GT60M102
|
835Kb/16P |
Discrete IGBTs
|
|
GT60M103
|
835Kb/16P |
Discrete IGBTs
|
|
GT60M104
|
253Kb/4P |
N CHANNEL IGBT (HIGH POWER SWITCHING APPLICATIONS)
|
|
GT60M104
|
835Kb/16P |
Discrete IGBTs
|
|
GT60M105
|
835Kb/16P |
Discrete IGBTs
|
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