| Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |
 Infineon Technologies A... |
IPBE65R115CFD7A
|
1Mb/14P |
MOSFET 650V CoolMOS짧 CFD7A SJ Power Device
Rev.2.1,2020-04-02 |
|
IPBE65R190CFD7A
|
1Mb/14P |
650V CoolMOS짧 CFD7A SJ Power Device
Rev.2.0,2020-08-27 |
|
IPBE65R050CFD7A
|
1Mb/14P |
MOSFET 650V CoolMOS짧 CFD7A SJ Power Device
Rev.2.1,2020-04-02 |
|
IPBE65R075CFD7A
|
1Mb/14P |
MOSFET 650V CoolMOS짧 CFD7A SJ Power Device
Rev.2.1,2020-04-02 |
|
IPBE65R099CFD7A
|
1Mb/14P |
MOSFET 650V CoolMOS짧 CFD7A SJ Power Device
Rev.2.1,2020-04-02 |
|
IPBE65R230CFD7A
|
1Mb/14P |
MOSFET 650V CoolMOS짧 CFD7A SJ Power Device
Rev.2.1,2020-04-02 |
|
IPB009N03L
|
1Mb/11P |
OptiMOS짧3 Power-Transistor, 30 V
Rev.2.0,2016-04-21 |
|
IPB009N03LG
|
500Kb/9P |
OptiMOS3 Power Transistor
2010-05-19 revision:1.3 |
|
IPB009N03LG
|
1Mb/11P |
OptiMOS짧3 Power-Transistor, 30 V
Rev.2.0,2016-04-21 |
|
IPB009N03LG
|
1Mb/11P |
OptiMOS짧3 Power-Transistor, 30 V
Rev.2.0,2016-04-21 |
|
IPB010N06N
|
1,021Kb/2P |
New OptiMOS??40V and 60V
07 / 2012 |
|
IPB010N06N
|
1Mb/11P |
OptiMOSTM Power-Transistor, 60 V
Rev.2.4,2016-01-18 |
 Inchange Semiconductor ... |
IPB010N06N
|
328Kb/3P |
N-Channel MOSFET Transistor
|
 Infineon Technologies A... |
IPB010N06N
|
1Mb/11P |
OptiMOSTM Power-Transistor, 60 V
Rev.2.4,2016-01-18 |
|
IPB011N04L
|
507Kb/9P |
OptiMOS3 Power Transistor
2010-05-19 revision:1.3 |
|
IPB011N04LG
|
507Kb/9P |
OptiMOS3 Power Transistor
2010-05-19 revision:1.3 |
|
IPB011N04NF2S
|
1Mb/11P |
StrongIRFETTM2 Power-Transistor
Rev. 2.0, 2022-10-12 |
|
IPB011N04NG
|
497Kb/9P |
OptiMOS3 Power-Transistor
2010-07-26 revision:1.4 |
|
IPB012N04NF2S
|
1Mb/11P |
StrongIRFETTM2 Power-Transistor
Rev. 2.0, 2022-10-12 |
|
IPB013N06NF2S
|
1Mb/11P |
StrongIRFETTM2 Power-Transistor
Rev. 2.0, 2022-10-17 |