| Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |
IP SEMICONDUCTOR CO., L... |
IPT12Q06-CEA
|
223Kb/4P |
High current density due to double mesa technology
|
|
IPT12Q06-CEB
|
223Kb/4P |
High current density due to double mesa technology
|
|
IPT12Q06-BEA
|
223Kb/4P |
High current density due to double mesa technology
|
|
IPT12Q06-BEB
|
223Kb/4P |
High current density due to double mesa technology
|
|
IPT12Q06-BEF
|
235Kb/4P |
High current density due to double mesa technology
|
|
IPT12Q08-BEA
|
223Kb/4P |
High current density due to double mesa technology
|
|
IPT12Q08-BEB
|
223Kb/4P |
High current density due to double mesa technology
|
|
IPT12Q08-BEF
|
235Kb/4P |
High current density due to double mesa technology
|
|
IPT12Q08-CEA
|
223Kb/4P |
High current density due to double mesa technology
|
|
IPT12Q08-CEB
|
223Kb/4P |
High current density due to double mesa technology
|
|
IPT12Q08-CEF
|
235Kb/4P |
High current density due to double mesa technology
|
|
IPT1206-BEA
|
226Kb/4P |
High current density due to double mesa technology
|
|
IPT1206-BEB
|
226Kb/4P |
High current density due to double mesa technology
|
|
IPT1206-BEF
|
237Kb/4P |
High current density due to double mesa technology
|
|
IPT1206-CEA
|
226Kb/4P |
High current density due to double mesa technology
|
|
IPT1206-CEB
|
226Kb/4P |
High current density due to double mesa technology
|
|
IPT1206-CEF
|
237Kb/4P |
High current density due to double mesa technology
|
|
IPT1206-SEA
|
226Kb/4P |
High current density due to double mesa technology
|
|
IPT1206-SEB
|
226Kb/4P |
High current density due to double mesa technology
|
|
IPT1206-SEF
|
237Kb/4P |
High current density due to double mesa technology
|
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