| Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |
 Nihon Inter Electronics... |
PHT40012
|
287Kb/5P |
THYRISTOR MODULE 400A / 1200V to 1600V
|
|
PHT40012
|
236Kb/4P |
400A Avg 1200~1600 Volts
|
|
PHT40012
|
236Kb/4P |
400A Avg 1200~1600 Volts
|
|
PHT40016
|
287Kb/5P |
THYRISTOR MODULE 400A / 1200V to 1600V
|
|
PHT40016
|
236Kb/4P |
400A Avg 1200~1600 Volts
|
|
PHT4008
|
243Kb/4P |
400A Avg 800 Volts
|
|
PHT400N16
|
803Kb/4P |
THYRISTOR
|
 Kyocera Kinseki Corpota... |
PHT400N16
|
854Kb/4P |
Thyristor
|
 National Instruments Co... |
PHT400N16
|
803Kb/4P |
THYRISTOR
|
 Nihon Inter Electronics... |
PHT400N8
|
790Kb/4P |
THYRISTOR
|
 Kyocera Kinseki Corpota... |
PHT400N8
|
823Kb/4P |
Thyristor
|
 National Instruments Co... |
PHT400N8
|
790Kb/4P |
THYRISTOR
|
 Teledyne Technologies I... |
PHT41410B
|
142Kb/2P |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
|
PHT41435B
|
108Kb/2P |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
|
PHT41470B
|
197Kb/2P |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
 NXP Semiconductors |
PHT4NQ10LT
|
347Kb/13P |
N-channel enhancement mode field-effect transistor
Rev. 01-11 September 2000 |
 VBsemi Electronics Co.,... |
PHT4NQ10LT
|
977Kb/6P |
N-Channel 100-V (D-S) MOSFET
|
 Nexperia B.V. All right... |
PHT4NQ10LT
|
440Kb/14P |
N-channel TrenchMOS logic level FET
Rev. 2 - 28 October 2011 |
 NXP Semiconductors |
PHT4NQ10LT-135
|
184Kb/13P |
N-channel TrenchMOS logic level FET
Rev. 2-28 October 2011 |
|
PHT4NQ10T
|
351Kb/13P |
N-channel enhancement mode field-effect transistor
Rev. 01-31 July 2000 |