| Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |
SeCoS Halbleitertechnol... |
SSD02N65SL
|
544Kb/5P |
N-Ch Enhancement Mode Power MOSFET
|
|
SSD02N60J
|
281Kb/3P |
N-Ch Enhancement Mode Power MOSFET
|
|
SSD02N60SL
|
565Kb/5P |
N-Ch Enhancement Mode Power MOSFET
|
VBsemi Electronics Co.,... |
SSD02N60SL
|
1Mb/9P |
N-Channel 650 V (D-S) MOSFET
|
SeCoS Halbleitertechnol... |
SSD02N60SL
|
565Kb/5P |
N-Ch Enhancement Mode Power MOSFET
|
|
SSD02N65
|
1Mb/4P |
2A , 650V , RDS(ON) 8 N-Ch Enhancement Mode Power MOSFET
|
|
SSD01L60
|
675Kb/4P |
N-Channel Enhancement Mode Power Mos.FET
|
|
SSD01N60
|
1Mb/5P |
N-Channel Enhancement Mode Power Mos.FET
|
|
SSD01N65J
|
175Kb/3P |
N-Ch Enhancement Mode Power MOSFET
|
|
SSD04N60J
|
161Kb/3P |
N-Ch Enhancement Mode Power MOSFET
|
SHENZHEN DOINGTER SEMIC... |
SSD04N60SL
|
1Mb/5P |
N-Channel MOSFET uses advanced trench technology
|
VBsemi Electronics Co.,... |
SSD04N60SL
|
1Mb/9P |
Power MOSFET
|
|
SSD04N65
|
1Mb/9P |
Power MOSFET
|
SeCoS Halbleitertechnol... |
SSD04N65J
|
294Kb/3P |
N-Ch Enhancement Mode Power MOSFET
|
SHENZHEN DOINGTER SEMIC... |
SSD04N65SL
|
1Mb/5P |
N-Channel MOSFET uses advanced trench technology
|
VBsemi Electronics Co.,... |
SSD04N65SL
|
1Mb/9P |
Power MOSFET
|
SHENZHEN DOINGTER SEMIC... |
SSD05N50SL
|
1Mb/5P |
N-Channel MOSFET uses advanced trench technology
|
SeCoS Halbleitertechnol... |
SSD05N60J
|
284Kb/3P |
N-Ch Enhancement Mode Power MOSFET
|
SHENZHEN DOINGTER SEMIC... |
SSD06N70SL
|
1Mb/5P |
N-Channel MOSFET uses advanced trench technology
|
List of Unclassifed Man... |
SSD0817
|
405Kb/43P |
LCD Segment / Common Driver with Controller
|
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