| Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |
SamHop Microelectronics... |
STM4470
|
143Kb/7P |
Super high dense cell design for low RDS(ON).
|
VBsemi Electronics Co.,... |
STM4470
|
1Mb/8P |
N-Channel 100-V (D-S) MOSFET
|
SamHop Microelectronics... |
STM4470A
|
123Kb/7P |
S uper high dense cell design for low R DS (ON).
|
VBsemi Electronics Co.,... |
STM4470A
|
1Mb/8P |
N-Channel 100-V (D-S) MOSFET
|
SamHop Microelectronics... |
STM4470E
|
120Kb/7P |
N-Channel Enhancement Mode Field Effect Transistor
|
VBsemi Electronics Co.,... |
STM4470E
|
1Mb/8P |
N-Channel 100-V (D-S) MOSFET
|
|
STM4410
|
1Mb/9P |
N-Channel 20V (D-S) MOSFET
|
SamHop Microelectronics... |
STM4410A
|
696Kb/7P |
N-Channel E nhancement Mode Field Effect Transistor
|
VBsemi Electronics Co.,... |
STM4410A
|
1Mb/9P |
N-Channel 20V (D-S) MOSFET
|
M.S. Kennedy Corporatio... |
STM4417
|
1Mb/7P |
P-Channel Enhancement Mode Field Effect Transistor
|
SamHop Microelectronics... |
STM4417
|
1Mb/7P |
P-Channel Enhancement Mode Field Effect Transistor
|
|
STM4431
|
887Kb/7P |
P -Channel E nhancement Mode F ield E ffect Transistor
|
|
STM4432
|
119Kb/7P |
Super high dense cell design for low RDS(ON).
|
SHENZHEN DOINGTER SEMIC... |
STM4432
|
1Mb/5P |
N-Channel MOSFET uses advanced trench technology
|
VBsemi Electronics Co.,... |
STM4432
|
1Mb/8P |
N-Channel 100-V (D-S) MOSFET
|
SamHop Microelectronics... |
STM4433
|
658Kb/7P |
P-Channel E nhancement Mode MOSFET
|
|
STM4433A
|
659Kb/7P |
P-Channel E nhancement Mode Field Effect Transistor
|
Weitron Technology |
STM4433A
|
387Kb/6P |
Surface Mount P-Channel Enhancement Mode MOSFET
|
SamHop Microelectronics... |
STM4435
|
745Kb/8P |
P-Channel E nhancement Mode Field Effect Transistor
|
SHENZHEN DOINGTER SEMIC... |
STM4435
|
1Mb/4P |
P-Channel MOSFET uses advanced trench technology
|
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